This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction...This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.展开更多
Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime....Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime. The breakdown voltage and breakdown delay of a number of switches with different geometries, gas pressures and pulse waveforms were investigated. Experimental results suggested that the breakdown voltage increases linearly with the gas pressure, and the breakdown delay decreases with an increase in the gas pressure and a reduction in the gap distance of the switch under the same applied pulse. By using this kind of switch with a gap of 3 mm as a peaking switch, a pulse generator can provide an output voltage with a peak voltage of 300 kV and a risetime of 3 ns on a resistance load of 150Ω.展开更多
The high-spin states of the odd-odd nucleus 170Ta have been studied by the 150Gd(19F,4n)170Ta reaction at the beam energy of 97 MeV.The α=1 sequence of the semi-decoupled band has been pushed to higher-spin states an...The high-spin states of the odd-odd nucleus 170Ta have been studied by the 150Gd(19F,4n)170Ta reaction at the beam energy of 97 MeV.The α=1 sequence of the semi-decoupled band has been pushed to higher-spin states and the signature inversion point was observed at 19.5ħ.The results are compared with those of the neighboring odd-odd nuclei.展开更多
文摘This paper develops a new simulation technique to characterize single event effects on semiconductor devices. The technique used to calculate the single event effects is developed according to the physical interaction mechanism of a single event effect. An application of the first principles simulation technique is performed to predict the ground-test single event upset effect on field-programmable gate arrays based on 0.25μm advanced complementary metal-oxidesemiconductor technology. The agreement between the single event upset cross section accessed from a broad-beam heavy ion experiment and simulation shows that the simulation technique could be used to characterize the single event effects induced by heavy ions on a semiconductor device.
基金supported by National Natural Science Foundation of China (No. 50437030)
文摘Structural design and tests on the characteristics of the SF6 gas switch with a small gap are presented. This kind of switch often works under high pressure and nanosecond pulse for getting pulse with faster risetime. The breakdown voltage and breakdown delay of a number of switches with different geometries, gas pressures and pulse waveforms were investigated. Experimental results suggested that the breakdown voltage increases linearly with the gas pressure, and the breakdown delay decreases with an increase in the gas pressure and a reduction in the gap distance of the switch under the same applied pulse. By using this kind of switch with a gap of 3 mm as a peaking switch, a pulse generator can provide an output voltage with a peak voltage of 300 kV and a risetime of 3 ns on a resistance load of 150Ω.
基金Supported by the National Natural Science Foundation of China under Grant Nos.19635030 and 19675007.
文摘The high-spin states of the odd-odd nucleus 170Ta have been studied by the 150Gd(19F,4n)170Ta reaction at the beam energy of 97 MeV.The α=1 sequence of the semi-decoupled band has been pushed to higher-spin states and the signature inversion point was observed at 19.5ħ.The results are compared with those of the neighboring odd-odd nuclei.
