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The influence of ablation products on the ablation resistance of C/C-SiC composites and the growth mechanism of SiO_2 nanowires
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作者 李县辉 燕青芝 +3 位作者 米应映 韩永军 温馨 葛昌纯 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期7-11,共5页
Ablation under oxyacetylene torch with heat flux of 4186.8(10%kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration(CVI) combined with liquid ... Ablation under oxyacetylene torch with heat flux of 4186.8(10%kW/m2 for 20 s was performed to evaluate the ablation resistance of C/C-SiC composites fabricated by chemical vapor infiltration(CVI) combined with liquid silicon infiltration(LSI) process.The results indicated that C/C-SiC composites present a better ablation resistance than C/C composites without doped SiC.The doped SiC and the ablation products SiO_2 derived from it play key roles in ablation process.Bulk quantities of SiO_2 nanowires with diameter of 80 nm-150 nm and length of tens microns were observed on the surface of specimens after ablation.The growth mechanism of the SiO_2 nanowires was interpreted with a developed vapor-liquid-solid(VLS) driven by the temperature gradient. 展开更多
关键词 耐烧蚀性能 复合材料 SIO2 纳米线 生长机理 产品 化学气相渗透 消融过程
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