Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the...Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σ_ ph ),and dark conductivity(σ_d),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.展开更多
Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects o...Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are investigated.By applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.展开更多
基金This workis supported by the State Key Development Programfor Basic Research of China ( Grant No. G2000028202 ,G2000028203)the Key Project of Education Bureau (Grant No.02167)the State Key Development Program(2002303261)
文摘Silicon thin films with different crystalline ratio(Xc) have been deposited by varying silane content(SC) of reactive gases in the RF-PECVD process.The effects of silane content on performance of the materials and the relationship between microstructure and opto-electronic properties were studied by means of Raman measurements,photoconductivity(σ_ ph ),and dark conductivity(σ_d),followed by the measurements of light absorption coefficient(α),the product of quantum efficiency,mobility and lifetime (ημτ),before,during and after light soaking,respectively.The results indicate that the microcrystalline silicon near the transition region is suitable to prepare microcrystalline silicon of device grade,and that the amorphous region of the material is responsible to the light induced degradation.
基金supportedbytheNationalBasicResearch Program ofChina(Nos.2011CBA00705,2011CBA00706,2011CBA00707)the Natural Science Foundation of Tianjin(No.12JCQNJC01000)the Fundamental Research Funds for the Central Universities
文摘Using plasma enhanced chemical vapor deposition（PECVD） at 13.56 MHz,a seed layer is fabricated at the initial growth stage of the hydrogenated microcrystalline silicon germanium(μc-Si1-xGex:H) i-layer.The effects of seeding processes on the growth ofμc-Si1-xGex:H i-layers and the performance ofμc-Si1-xGex:H p-i-n single junction solar cells are investigated.By applying this seeding method,theμc-Si1-xGex:H solar cell shows a significant improvement in short circuit current density(Jsc) and fill factor（FF） with an acceptable performance of blue response as aμc-Si:H solar cell even when the Ge content x increases up to 0.3.Finally,an improved efficiency of 7.05%is achieved for theμc-Si0.7Ge0.3:H solar cell.
