High pure wurtzite structure GaN has been synthesized by gas reaction method.Its structure was determined by powder x-ray diffraction using the Rietveld technique.The heat capacity Cp was measured from 113 to 1073 K,w...High pure wurtzite structure GaN has been synthesized by gas reaction method.Its structure was determined by powder x-ray diffraction using the Rietveld technique.The heat capacity Cp was measured from 113 to 1073 K,which can be represented by Cp=0.362+3.010 × 10^(-4)T-3.411 × 10^(3)T-2-7.791 × 10^(-8)T^(2).No measurable phase transition was observed in this temperature range.展开更多
Bi_(2)Sr_(2-x)LaxCu_(1)O_(6+δ)(La-2201)thin films were successfully prepared on(100)SrTiO_(3) and(100)LaAIO_(3) substrates by in-situ dc-magnetron sputtering process.A series compensated 2201 targets of La^(3+)substi...Bi_(2)Sr_(2-x)LaxCu_(1)O_(6+δ)(La-2201)thin films were successfully prepared on(100)SrTiO_(3) and(100)LaAIO_(3) substrates by in-situ dc-magnetron sputtering process.A series compensated 2201 targets of La^(3+)substitution contents for Sr^(2+)were studied for growing 2201 phase thin films.The superconducting zero resistance temperature T_(c,0) reached 19K.X-ray diffraction analyses showed that films oriented with c-axis perpendicular to the substrate surface and their lattice parameters are around 2.43-2.46nm.Ф-scan and rocking curve show a good epitaxial growth and crystallisation of the films.展开更多
基金Supported by the Chinese Academy of Sciences under Contract No.KJ952-J1-411.
文摘High pure wurtzite structure GaN has been synthesized by gas reaction method.Its structure was determined by powder x-ray diffraction using the Rietveld technique.The heat capacity Cp was measured from 113 to 1073 K,which can be represented by Cp=0.362+3.010 × 10^(-4)T-3.411 × 10^(3)T-2-7.791 × 10^(-8)T^(2).No measurable phase transition was observed in this temperature range.
文摘Bi_(2)Sr_(2-x)LaxCu_(1)O_(6+δ)(La-2201)thin films were successfully prepared on(100)SrTiO_(3) and(100)LaAIO_(3) substrates by in-situ dc-magnetron sputtering process.A series compensated 2201 targets of La^(3+)substitution contents for Sr^(2+)were studied for growing 2201 phase thin films.The superconducting zero resistance temperature T_(c,0) reached 19K.X-ray diffraction analyses showed that films oriented with c-axis perpendicular to the substrate surface and their lattice parameters are around 2.43-2.46nm.Ф-scan and rocking curve show a good epitaxial growth and crystallisation of the films.
