The polarization dependence of conduction inf ersubband transitions in GaAs/AlGaAs step multiqua.ntum well structures hasJbeen studied using infrared spectroscopy.For S-polarized 45°oblique angle incidence config...The polarization dependence of conduction inf ersubband transitions in GaAs/AlGaAs step multiqua.ntum well structures hasJbeen studied using infrared spectroscopy.For S-polarized 45°oblique angle incidence configuration with respect to sample surface normal,the transverse electric(TE)active intersubband transitions were observed.Both transverse electric and transverse magnetic(TM)active intersubband transitions were obtained in P-polarized incidence at 45°angle on sample,which shows a small energy splitting between TE and TM absorption peaks.展开更多
基金Supported by the National Natural Science Foundation of China.
文摘The polarization dependence of conduction inf ersubband transitions in GaAs/AlGaAs step multiqua.ntum well structures hasJbeen studied using infrared spectroscopy.For S-polarized 45°oblique angle incidence configuration with respect to sample surface normal,the transverse electric(TE)active intersubband transitions were observed.Both transverse electric and transverse magnetic(TM)active intersubband transitions were obtained in P-polarized incidence at 45°angle on sample,which shows a small energy splitting between TE and TM absorption peaks.
