Colloidal quantum-dot(QD)light-emitting diodes(QLEDs)have been in the forefront of future display devices due to their outstanding optoelectronic properties.However,a complicated solution-process for patterning the re...Colloidal quantum-dot(QD)light-emitting diodes(QLEDs)have been in the forefront of future display devices due to their outstanding optoelectronic properties.However,a complicated solution-process for patterning the red,green,and blue QDs deteriorates the QLED performance and limits the resolution of full-color displays.Herein,we report a novel concept of QD–organic hybrid light-emitting diodes by introducing an organic blue common layer(BCL)which is deposited through a common mask over the entire sub-pixels.Benefitted from the optimized device structure,red and green QLEDs retained their color coordinates despite the presence of the BCL.Furthermore,adopting the BCL improved the external quantum efficiency of green and red QLEDs by 38.4%and 11.7%,respectively,due to the Förster resonance energy transfer from the BCL to the adjacent QD layers.With the BCL structure,we could simply demonstrate a full-color QD-organic hybrid device in a single substrate.We believe that this device architecture is practically applicable for easier fabrication of solution-processed,highresolution,and full-color displays with reduced process steps.展开更多
Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately,...Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.展开更多
基金supported by the Technology Innovation Program(Nos.20010371 and 20010737)the Industrial Core Technology Development Program(No.10077471)funded by the Ministry of Trade,Industry&Energy(MOTIE,Korea).
文摘Colloidal quantum-dot(QD)light-emitting diodes(QLEDs)have been in the forefront of future display devices due to their outstanding optoelectronic properties.However,a complicated solution-process for patterning the red,green,and blue QDs deteriorates the QLED performance and limits the resolution of full-color displays.Herein,we report a novel concept of QD–organic hybrid light-emitting diodes by introducing an organic blue common layer(BCL)which is deposited through a common mask over the entire sub-pixels.Benefitted from the optimized device structure,red and green QLEDs retained their color coordinates despite the presence of the BCL.Furthermore,adopting the BCL improved the external quantum efficiency of green and red QLEDs by 38.4%and 11.7%,respectively,due to the Förster resonance energy transfer from the BCL to the adjacent QD layers.With the BCL structure,we could simply demonstrate a full-color QD-organic hybrid device in a single substrate.We believe that this device architecture is practically applicable for easier fabrication of solution-processed,highresolution,and full-color displays with reduced process steps.
文摘Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.
