A Continuous Current Model of Accumulation Mode(Junctionless)Cylindrical Surrounding-Gate Nanowire MOSFETs

A continuous current model of accumulation mode or so-called junctionless(JL)cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors(MOSFETs)is proposed.The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations.It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement.Without any empirical fitting parameters,the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.

Investigation of operation and degradation mechanisms in ZnTeSe blue quantum-dot light-emitting diodes by identifying recombination zone

ZnTeSe quantum dots(QDs),recognized as promising eco-friendly blue electroluminescent emitters,remain under-explored in light-emitting diode(LED)applications.Here,to elucidate the operation and degradation mechanisms of ZnTeSe blue QD-LEDs,stacked ZnTeSe QD layers with discernable luminescence are designed by varying Te doping concentrations,and the recombination zones(RZs)of the blue QD-LEDs are investigated.The RZs are identified near the hole-transport layer(HTL),confirmed by angular-dependent electroluminescence measurements and optical simulations.In addition,in order to investigate carrier dynamics in the process of recombination,the transient electroluminescence(tr-EL)signals of the dichromatic QD-LEDs are analyzed.As a result,it is inferred that the RZ initially formed near the electron-transport layer(ETL)due to the high injection barriers of electrons.However,due to the fast electron mobility,the RZ shifts toward the HTL as the operating current increases.After the device lifetime tests,the RZ remains stationary while the photoluminescence(PL)corresponding to the RZ undergoes a substantial decrease,indicating that the degradation is accelerated by the concentrated RZ.Thus this study contributes to a deeper understanding of the operational mechanisms of ZnTeSe blue QD-LEDs.

Depolarization mitigated in ferroelectric Hf_(0.5)Zr_(0.5)O_(2)ultrathin films(<5 nm)on Si substrate by interface engineering

(Hf,Zr)O_(2)offers considerable potential for next-generation semiconductor devices owing to its nonvolatile spontaneous polarization at the nanoscale.However,scaling this material to sub-5 nm thickness poses several challenges,including the formation of an interfacial layer and high trap concentration.In particular,a low-k SiO_(2)interfacial layer is naturally formed when(Hf,Zr)O_(2)films are directly grown on a Si substrate,leading to high depolarization fields and rapid reduction of the remanent polarization.To address these issues,we conducted a study to significantly improve ferroelectricity and switching endurance of(Hf,Zr)O_(2)films with sub-5 nm thicknesses by inserting a TiO_(2)interfacial layer.The deposition of a Ti film prior to Hf_(0.5)Zr_(0.5)O_(2)film deposition resulted in a high-k TiO_(2)interfacial layer and prevented the direct contact of Hf_(0.5)Zr_(0.5)O_(2)with Si.Our findings show that the high-k TiO_(2)interfacial layer can reduce the SiO_(2)/Si interface trap density and the depolarization field,resulting in a switchable polarization of 60.2μC/cm^(2)for a 5 nm thick Hf_(0.5)Zr_(0.5)O_(2)film.Therefore,we propose that inserting a high-k TiO_(2)interfacial layer between the Hf_(0.5)Zr_(0.5)O_(2)film and the Si substrate may offer a promising solution to enhancing the ferroelectricity and reliability of(Hf,Zr)O_(2)grown on the Si substrate and can pave the way for next-generation semiconductor devices with improved performance.

Simulation study on short channel double-gate junctionless field-effect transistors

We study the characteristics of short channel double-gate(DG) junctionless(JL) FETs by device simulation. OutputⅠ-Ⅴcharacteristic degradations such as an extremely reduced channel length induced subthreshold slope increase and the threshold voltage shift due to variations of body doping and channel length have been systematically analyzed.Distributions of electron concentration,electric field and potential in the body channel region are also analyzed.Comparisons with conventional inversion-mode(IM) FETs,which can demonstrate the advantages of JL FETs,have also been performed.

Negative voltage bandgap reference with multilevel curvature compensation technique

A novel high-order curvature compensation negative voltage bandgap reference （NBGR） based on a novel multilevel compensation technique is introduced. Employing an exponential curvature compensation （ECC） term with many high order terms in itself, in a lower temperature range （TR） and a multilevel curvature compen- sation （MLCC） term in a higher TR, a flattened and better effect of curvature compensation over the TR of 165℃ （--40 to 125 ℃） is realised. The MLCC circuit adds two convex curves by using two sub-threshold operated NMOS. The proposed NBGR implemented in the Central Semiconductor Manufacturing Corporation （CSMC） 0.5 #m BCD technology demonstrates an accurate voltage of-1.183 V with a temperature coefficient （TC） as low as 2.45 ppm/℃over the TR of 165℃ at a -5.0 V power supply; the line regulation is 3 mV/V from a -5 to -2 V supply voltage. The active area of the presented NBGR is 370×180 μm2.

Structurally engineered colloidal quantum dot phosphor using TiO_(2) photonic crystal backbone

Photonic crystal(PhC)phosphor,in which the phosphor material is periodically modulated for an enhancement in color-conversion efficiency via resonant absorption of excitation photons,is a paradigm-shifting structural phosphor platform.Two-dimensional(2D)square-lattice PhC phosphor is currently considered the most advanced platform because of not only its high efficiency,but also its immunity to excitation polarization.In the present study,two major modifications are made to further improve the performance of the 2D PhC phosphor:increasing the refractive index contrast and planarizing the surface.The index contrast is improved by replacing the PhC backbone material with TiO_(2)whereas the surface planarization is achieved by removing excessive colloidal quantum dots from the surface.In comparison with the reference phosphor,the upgraded PhC phosphor exhibits~59 times enhanced absorption(in simulations)and~7 times enhanced emission(in experiments),both of which are unprecedentedly high.Our results not only brighten the viability and applicability of the PhC phosphor but also spur the phosphor development through structural engineering of phosphor materials.

Comprehensive analysis of two-dimensional charge transport mechanism in thin-film transistors based on random networks of single-wall carbon nanotubes using transient measurements

Understanding charge transport mechanisms in thin-film transistors based on random networks of single-wall carbon nanotubes(SWCNT-TFTs)is essential for further advances to improve the potential for various nanoelectronic applications.Herein,a comprehensive investigation of the two-dimensional(2D)charge transport mechanism in SWCNT-TFTs is reported by analyzing the temperature-dependent electrical characteristics determined from the direct-current and non-quasi-static transient measurements at 80-300 K.To elucidate the time-domain charge transport characteristics of the random networks in the SWCNTs,an empirical equation was derived from a theoretical trapping model,and a carrier velocity distribution was determined from the differentiation of the transient response.Furthermore,charge trapping and de-trapping in shallow-and deep-traps in SWCNT-TFTs were analyzed by investigating charge transport based on their trapping/de-trapping rate.The comprehensive analysis of this study provides fundamental insights into the 2D charge transport mechanism in TFTs based on random networks of nanomaterial channels.

Modeling of subthreshold characteristics for undoped and doped deep nanoscale short channel double-gate MOSFETs

A model of subthreshold characteristics for both undoped and doped double-gate （DG） MOSFETs has been proposed. The models were developed based on solution of 2-D Poisson＇s equation using variable separa- tion technique. Without any fitting parameters, our proposed models can exactly reflect the degraded subthreshold characteristics due to nanoscale channel length. Also, design parameters such as body thickness, gate oxide thick- ness and body doping concentrations can be directly reflected from our models. The models have been verified by comparing with device simulations＇ results and found very good agreement.

Quantum-dot and organic hybrid light-emitting diodes employing a blue common layer for simple fabrication of full-color displays

Colloidal quantum-dot(QD)light-emitting diodes(QLEDs)have been in the forefront of future display devices due to their outstanding optoelectronic properties.However,a complicated solution-process for patterning the red,green,and blue QDs deteriorates the QLED performance and limits the resolution of full-color displays.Herein,we report a novel concept of QD–organic hybrid light-emitting diodes by introducing an organic blue common layer(BCL)which is deposited through a common mask over the entire sub-pixels.Benefitted from the optimized device structure,red and green QLEDs retained their color coordinates despite the presence of the BCL.Furthermore,adopting the BCL improved the external quantum efficiency of green and red QLEDs by 38.4%and 11.7%,respectively,due to the Förster resonance energy transfer from the BCL to the adjacent QD layers.With the BCL structure,we could simply demonstrate a full-color QD-organic hybrid device in a single substrate.We believe that this device architecture is practically applicable for easier fabrication of solution-processed,highresolution,and full-color displays with reduced process steps.

Is quantum capacitance in graphene a potential hurdle for device scaling？

Transistor size is constantly being reduced to improve performance as well as power consumption. For the channel length to be reduced, the corresponding gate dielectric thickness should also be reduced. Unfortunately, graphene devices are more complicated due to an extra capacitance called quantum capacitance （CQ） which limits the effective gate dielectric reduction. In this work, we analyzed the effect of CQ on device-scaling issues by extracting it from scaling of the channel length of devices. In contrast to previous reports for metal-insulator- metal structures, a practical device structure was used in conjunction with direct radio-frequency field-effect transistor measurements to describe the graphene channels. In order to precisely extract device parameters, we reassessed the equivalent circuit, and concluded that the on-state model should in fact be used. By careful consideration of the underlap region, our device modeling was shown to be in good agreement with the experimental data. CQ contributions to equivalent oxide thickness were analyzed in detail for varying impurity concentrations in graphene. Finally, we were able to demonstrate that despite contributions from CQ, graphene＇s high mobility and low-voltage operation allows for ~raphene channels suitable for next generation transistors.

Deflection angle switching with a metasurface based on phase-change nanorods [Invited]

We propose the active metasurface using phase-change material Ge2Sb2Te5（GST）, which has two distinct phases so called amorphous and crystalline phases, for an ultrathin light path switching device. By arranging multiple anisotropic GST nanorods, the gradient metasurface, which has opposite directions of phase gradients at the two distinct phases of GST, is demonstrated theoretically and numerically. As a result, in the case of normal incidence of circularly polarized light at the wavelength of 1650 nm, the cross-polarized light deflects to-55.6° at the amorphous phase and ＋55.6° at the crystalline phase with the signal-to-noise ratio above 10 dB.