Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increa...Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.展开更多
We have studied laser-produced plasma based on mass-limited thin-film Gd targets for beyond the current extreme ultraviolet(EUV)light source of 13.5 nm wavelength based on tin.The influences of the laser intensity on ...We have studied laser-produced plasma based on mass-limited thin-film Gd targets for beyond the current extreme ultraviolet(EUV)light source of 13.5 nm wavelength based on tin.The influences of the laser intensity on the emission spectra centered around 6.7 nm from thin-film Gd targets were first investigated.It is found that the conversion efficiency of the produced plasma is saturated when the laser intensity goes beyond 2×10^(11)W cm^(-2).We have systematically compared the emission spectra of the laser-produced plasma with the changes in the thicknesses of the thin-film Gd targets.It is proved that a minimum-mass target with a thickness of 400 nm is sufficient to provide the maximum conversion efficiency,which also implies that this thickness is the ablation depth for the targets.These findings should be helpful in the exploration of next-generation EUV sources,as the thin-film Gd targets will reduce the debris during the plasma generation process compared with the bulk targets.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos. 61036001 and 60976001)the Priority Academic Program Development of Higher Education Institutions of Jiangsu Province, Chinathe National Basic Research Program of China (Grant No. 2013CB632101)
文摘Cadmium sulphide (CdS) and cadmium telluride (CdTe) thin films are deposited by electron beam evaporation. Atomic force microscopy (AFM) reveals that the root mean square (RMS) roughness values of the CdS films increase as substrate temperature increases. The optical band gap values of CdS films increase slightly with the increase in the substrate temperature, in a range of 2.42-2.48 eV. The result of Hall effect measurement suggests that the carrier concentration decreases as the substrate temperature increases, making the resistivity of the CdS films increase. CdTe films annealed at 300℃ show that their lowest transmittances are due to their largest packing densities. The electrical characteristics of CdS/CdTe thin film solar cells are investigated in dark conditions and under illumination. Typical rectifying and photovoltaic properties are obtained.
基金supported by National Natural Science Foundation of China(Nos.61427812,61805118,12104216 and 12241403)the Natural Science Foundation of Jiangsu Province of China(Nos.BK20192006,BK20180056 and BK20200307)。
文摘We have studied laser-produced plasma based on mass-limited thin-film Gd targets for beyond the current extreme ultraviolet(EUV)light source of 13.5 nm wavelength based on tin.The influences of the laser intensity on the emission spectra centered around 6.7 nm from thin-film Gd targets were first investigated.It is found that the conversion efficiency of the produced plasma is saturated when the laser intensity goes beyond 2×10^(11)W cm^(-2).We have systematically compared the emission spectra of the laser-produced plasma with the changes in the thicknesses of the thin-film Gd targets.It is proved that a minimum-mass target with a thickness of 400 nm is sufficient to provide the maximum conversion efficiency,which also implies that this thickness is the ablation depth for the targets.These findings should be helpful in the exploration of next-generation EUV sources,as the thin-film Gd targets will reduce the debris during the plasma generation process compared with the bulk targets.
