Technology roadmaps have been a part of the semiconductor industry for many years.The first roadmap was Moore’s law,which started as an empirical observation that competitive forces then turned into a prediction that...Technology roadmaps have been a part of the semiconductor industry for many years.The first roadmap was Moore’s law,which started as an empirical observation that competitive forces then turned into a prediction that became an industry roadmap.Then the ITRS roadmap was developed and for many years was used by leading edge semiconductor producers to drive new technology they needed.Now there is the IRDS roadmap,which projects semiconductor end user requirements and develops a technology roadmap based on those requirements.The 2017 IRDS roadmap was just released.To prepare the roadmap,we received input from experts around the world.The roadmap predicts that the requirements of high performance logic will drive the development of different device structures in logic chips.Memory technology will also advance but is more focused on cost than high performance logic is.Because of this,there may be a split in the patterning roadmaps for different types of devices.Logic will adopt EUV and its extensions,while flash memory will consider nanoimprint.Directed self-assembly and direct write e-beam are also being developed.DSA has the potential to improve CD uniformity and lower costs.Direct write e-beam promises to make personalization of chips more feasible.DRAM memory will trail logic in critical dimensions and will adopt EUV when it becomes cost effective.The lithography community will both have to make EUV work and overcome the challenges of randomness in CDs and resist performance,while memory will try to make nanoimprint a reliable and low defect method of patterning.Long term,logic is expected to start focusing on 3D architectures in the late 2020’s.This will put a tremendous stress on the yield of patterning processes and on reducing the number of process steps that are required.It will also put more focus on hole type patterns,which will become one of the key patterning challenges in the future.展开更多
An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake te...An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.展开更多
Calix[4]resorcinarene, prepared by the acidcatalyzed condensation of resorcinol and paraldehyde, was used as the core of the molecular glass compound. The hydroxyl groups of calix[4]resorcinarene were partly protected...Calix[4]resorcinarene, prepared by the acidcatalyzed condensation of resorcinol and paraldehyde, was used as the core of the molecular glass compound. The hydroxyl groups of calix[4]resorcinarene were partly protected by tert-butoxycarbonyl(t-BOC) and then esterified with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl). Upon irradiation to 365 nm light, the 2,1,4-DNQ groups undergo photolysis to generate a small quantity of sulfonic acid other than indene carboxylic acid. The generated sulfonic acid can further catalyze the deprotection of the t-BOC group. So, a new type of single-component chemically amplified i-line positive photoresist can be formed by the molecular glass compounds. The lithographic performance of the resist was evaluated with high resolution and photosensitivity with an i-line stepper.展开更多
文摘Technology roadmaps have been a part of the semiconductor industry for many years.The first roadmap was Moore’s law,which started as an empirical observation that competitive forces then turned into a prediction that became an industry roadmap.Then the ITRS roadmap was developed and for many years was used by leading edge semiconductor producers to drive new technology they needed.Now there is the IRDS roadmap,which projects semiconductor end user requirements and develops a technology roadmap based on those requirements.The 2017 IRDS roadmap was just released.To prepare the roadmap,we received input from experts around the world.The roadmap predicts that the requirements of high performance logic will drive the development of different device structures in logic chips.Memory technology will also advance but is more focused on cost than high performance logic is.Because of this,there may be a split in the patterning roadmaps for different types of devices.Logic will adopt EUV and its extensions,while flash memory will consider nanoimprint.Directed self-assembly and direct write e-beam are also being developed.DSA has the potential to improve CD uniformity and lower costs.Direct write e-beam promises to make personalization of chips more feasible.DRAM memory will trail logic in critical dimensions and will adopt EUV when it becomes cost effective.The lithography community will both have to make EUV work and overcome the challenges of randomness in CDs and resist performance,while memory will try to make nanoimprint a reliable and low defect method of patterning.Long term,logic is expected to start focusing on 3D architectures in the late 2020’s.This will put a tremendous stress on the yield of patterning processes and on reducing the number of process steps that are required.It will also put more focus on hole type patterns,which will become one of the key patterning challenges in the future.
文摘An i-Line chemically amplified(ICA)thick film positive resist is reported in this paper.The impact of process conditions on photoresist performance was investigated.Pre-apply bake temperature and post exposure bake temperature affect acid diffusion and deblocking reactions,thus playing an integral role in defining the resist profile.Both pre-apply bake delay and post exposure delay(PED)affect critical dimension(CD)variation,but PED is more sensitive to contact with airborne contaminants.Different polymers and different photo-acid generators(PAG)are also illustrated in this work.By optimizing the structure and concentration of key components,an ICA resist with good environment stability and excellent lithographic performance was demonstrated.
基金supported by National Science and Technology Major Projects(2010ZX02303)the Fundamental Research Funds for the Central Universities
文摘Calix[4]resorcinarene, prepared by the acidcatalyzed condensation of resorcinol and paraldehyde, was used as the core of the molecular glass compound. The hydroxyl groups of calix[4]resorcinarene were partly protected by tert-butoxycarbonyl(t-BOC) and then esterified with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl). Upon irradiation to 365 nm light, the 2,1,4-DNQ groups undergo photolysis to generate a small quantity of sulfonic acid other than indene carboxylic acid. The generated sulfonic acid can further catalyze the deprotection of the t-BOC group. So, a new type of single-component chemically amplified i-line positive photoresist can be formed by the molecular glass compounds. The lithographic performance of the resist was evaluated with high resolution and photosensitivity with an i-line stepper.
