Kesterite structure semiconductor Cu2ZnSn（S,Se）4 is one of the most promising candidate as a light absorber material to overtake the next generation of thin film solar cells, owing to its low cost, non-toxic, and ea...Kesterite structure semiconductor Cu2ZnSn（S,Se）4 is one of the most promising candidate as a light absorber material to overtake the next generation of thin film solar cells, owing to its low cost, non-toxic, and earth abundant source materials. The Sbockley-Queisser limit of the single junction Cu2ZnSn（S,Se）4 solar cell is over 30%, signifying a large potential of this family of solar cells. In the past years, with the development of synthesis techniques, Cu2ZnSn（S,Se）4 solar cells have attracted considerable atten- tion and the power conversion efficiency of Cu2ZnSn（S,Se）4 solar cell has experienced a rapid progress. Presently, the certified champion efficiency of CZTSSe solar cells has reached to 12.6%, which is far below the efficiency of Cu（ln,Ga）Se2 solar cell. In this review, the developments of Cu2ZnSn（S,Se）4 solar cells in recent years are briefly reviewed. Then the fundamental understanding of Cu2ZnSn（S,Se）4 solar cells is introduced, including materials and device structure, as well as the band alignment of hetero-junction and their impacts on device performance. After that, we mainly review the progress and achievements in the preparation processes, through vacuum and non-vacuum based processes. Finally, we outline the challenges and perspectives of this promising solar cell.展开更多
基金supported by the National University Research Fund(GK261001009)the Changjiang Scholar,Innovative Research Team(IRT_14R33)+3 种基金the Overseas Talent Recruitment Project(B14041)Chinese National 1000-talent-plan program and the National Science Foundation of China(51572132,61674082,61704100)Tianjin Natural Science Foundation of Key Project(16JCZDJC30700)Yang Fan Innovative and Entrepreneurial Research Team Project(2014YT02N037)
文摘Kesterite structure semiconductor Cu2ZnSn（S,Se）4 is one of the most promising candidate as a light absorber material to overtake the next generation of thin film solar cells, owing to its low cost, non-toxic, and earth abundant source materials. The Sbockley-Queisser limit of the single junction Cu2ZnSn（S,Se）4 solar cell is over 30%, signifying a large potential of this family of solar cells. In the past years, with the development of synthesis techniques, Cu2ZnSn（S,Se）4 solar cells have attracted considerable atten- tion and the power conversion efficiency of Cu2ZnSn（S,Se）4 solar cell has experienced a rapid progress. Presently, the certified champion efficiency of CZTSSe solar cells has reached to 12.6%, which is far below the efficiency of Cu（ln,Ga）Se2 solar cell. In this review, the developments of Cu2ZnSn（S,Se）4 solar cells in recent years are briefly reviewed. Then the fundamental understanding of Cu2ZnSn（S,Se）4 solar cells is introduced, including materials and device structure, as well as the band alignment of hetero-junction and their impacts on device performance. After that, we mainly review the progress and achievements in the preparation processes, through vacuum and non-vacuum based processes. Finally, we outline the challenges and perspectives of this promising solar cell.
