In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhanceme...In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni（30 nm）/MgF 2（62 nm）/ZnS（16 nm）/Ni（20 nm） and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A（at 62.3 mA/cm 2） together with a very stable chromaticity.The contrast ratio reaches 561：1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.展开更多
基金Project supported by the State Key Development Program for Basic Research of China (Grant No. 2009CB930600)the National Natural Science Foundation of China (Grant Nos. 60907047,61274065,60977024,21101095,20974046,21003076,51173081,and 61136003)+3 种基金the Specialized Research Foundation for the Doctoral Program of Higher Education,China (Grant No. 20093223120003)the Natural Science Foundation of Institutions of Higher Education of Jiangsu Province,China (Grant Nos. SJ209003,09KJB150009,10KJB510013,and TJ209035)the "Qing Lan" Program of Jiangsu Province,Chinathe Program of Nanjing University of Posts and Telecommunications,China (Grant Nos. NY210015,NY211069,and NY210040)
文摘In this paper we report on a high-contrast top-emitting organic light-emitting device utilizing a moderate-reflection contrast-enhancement stack and a high refractive index anti-reflection layer.The contrast-enhancement stack consists of a thin metal anode layer,a dielectric bilayer,and a thick metal underlayer.The resulting device,with the optimized contrast-enhancement stack thicknesses of Ni（30 nm）/MgF 2（62 nm）/ZnS（16 nm）/Ni（20 nm） and the 25-nm-thick ZnS anti-reflection layer,achieves a luminous reflectance of 4.01% in the visible region and a maximum current efficiency of 0.99 cd/A（at 62.3 mA/cm 2） together with a very stable chromaticity.The contrast ratio reaches 561：1 at an on-state brightness of 1000 cd/m^2 under an ambient illumination of 140 lx.In addition,the anti-reflection layer can also enhance the transmissivity of the cathode and improve light out-coupling by the effective restraint of microcavity effects.
