Ultra-low temperature radio-frequency performance of partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors with tunnel diode body contact structures

Radio-frequency（RF） characteristics under ultra-low temperature of multi-finger partially depleted silicon-oninsulator（PD SOI） n-type metal-oxide-semiconductor field-effect transistors（nMOSFETs） with tunnel diode body-contact（TDBC） structure and T-gate body-contact（TB） structure are investigated in this paper.When operating at 77 K,TDBC device suppresses floating-body effect（FBE） as well as the TB device.For TB device and TDBC device,cut-off frequency（fT） improves as the temperature decreases to liquid-helium temperature（77 K） while that of the maximum oscillation frequency（/max） is opposite due to the decrease of the unilateral power gain.While operating under 77 K,fT and f（max） of TDBC device reach to 125 GHz and 77 GHz,representing 8%and 15% improvements compared with those of TB device,respectively,which is mainly due to the lower parasitic resistances and capacitances.The results indicate that TDBC SOI MOSFETs could be considered as promising candidates for analog and RF applications over a wide range of temperatures and there is immense potential for the development of RF CMOS integrated circuits for cryogenic applications.

Modeling random telegraph signal noise in CMOS image sensor under low light based on binomial distribution

The random telegraph signal noise in the pixel source follower MOSFET is the principle component of the noise in the CMOS image sensor under low light. In this paper, the physical and statistical model of the random telegraph signal noise in the pixel source follower based on the binomial distribution is set up. The number of electrons captured or released by the oxide traps in the unit time is described as the random variables which obey the binomial distribution. As a result,the output states and the corresponding probabilities of the first and the second samples of the correlated double sampling circuit are acquired. The standard deviation of the output states after the correlated double sampling circuit can be obtained accordingly. In the simulation section, one hundred thousand samples of the source follower MOSFET have been simulated,and the simulation results show that the proposed model has the similar statistical characteristics with the existing models under the effect of the channel length and the density of the oxide trap. Moreover, the noise histogram of the proposed model has been evaluated at different environmental temperatures.

An investigation of the DC and RF performance of InP DHBTs transferred to RF CMOS wafer substrate

This paper investigated the DC and RF performance of the In P double heterojunction bipolar transistors（DHBTs）transferred to RF CMOS wafer substrate.The measurement results show that the maximum values of the DC current gain of a substrate transferred device had one emitter finger,of 0.8μm in width and 5μm in length,are changed unobviously,while the cut-off frequency and the maximum oscillation frequency are decreased from 220to 171 GHz and from 204 to 154 GHz,respectively.In order to have a detailed insight on the degradation of the RF performance,small-signal models for the In P DHBT before and after substrate transferred are presented and comparably extracted.The extracted results show that the degradation of the RF performance of the device transferred to RF CMOS wafer substrate are mainly caused by the additional introduced substrate parasitics and the increase of the capacitive parasitics induced by the substrate transfer process itself.

A novel loss compensation technique analysis and design for 60 GHz CMOS SPDT switch

A novel loss compensation technique for a series-shunt single-pole double-throw （SPDT） switch is pre- sented operating in the 60 GHz. The feed-forward compensation network which is composed of an NMOS, a couple capacitance and a shunt inductance can reduce the impact of the feed forward capacitance to reduce the insertion loss and improve the isolation of the SPDT switch. The measured insertion loss and isolation characteristics of the switch somewhat deviating from the 60 GHz are analyzed revealing that the inaccuracy of the MOS model can greatly degrade the performance of the switch. The switch is implemented in TSMC 90-nm CMOS process and exhibits an isolation of above 27 dB at transmitter mode, and the insertion loss of 1.8-3 dB at 30--65 GHz by layout simulation. The measured insertion loss is 2.45 dB at 52 GHz and keeps 〈 4 dB at 30-64 GHz. The measured isolation is better than 25 dB at 30--64 GHz and the measured return loss is better than 10 dB at 30-65 GHz. A measured input 1 dB gain compression point of the switch is 13 dBm at 52 GHz and 15 dBm at 60 GHz. The simulated switching speed with rise time and fall time are 720 and 520 ps, respectively. The active chip size of the proposed switch is 0.5 × 0.95 mm2.

A novel compact model for on-chip stacked transformers in RF-CMOS technology

A novel compact model for on-chip stacked transformers is presented.The proposed model topology gives a clear distinction to the eddy current,resistive and capacitive losses of the primary and secondary coils in the substrate.A method to analytically determine the non-ideal parasitics between the primary coil and substrate is provided.The model is further verified by the excellent match between the measured and simulated S-parameters on the extracted parameters for a 1：1 stacked transformer manufactured in a commercial RF-CMOS technology.

Structure evolution,dielectric,and conductivity behavior of(K_(0.5)Na_(0.5))NbO_(3)-Bi(Zn_(2/3)Nb_(1/3))O_(3) ceramics

(1-x)K_(0.5)Na_(0.5)Nb0_(3-x)Bi(Zn_(2/3)Nb_(1/3))0_(3)((1-x)KNN-xBZN,x=0.010,0.015,0.020,0.025,and 0.030)lead-free ceramics were fabricated via a traditional solid-state method.The crystal structure,microstructure,dielectric,and conductivity behavior of this system were studied.Combined with X-ray diffraction(XRD)patterns,Rietveld refinement,and dielectric spectroscopy,an orthorhombic phase was determined for x=0.010,an orthorhombic-tetragonal mixed phase was identified for x=0.015,and a rhombohedral symmetry appears in 0.020≤x≤0.030.Both 0.98KNN-0.02BZN and 0.975KNN-0.025BZN ceramics exhibit stable permittivity and low dielectric loss tangent(tan)in wide temperature ranges owing to the combination of rhombohedral-tetragonal step-like feature and the diffuse phase transition from tetragonal to cubic.The activation energies of dielectric relaxation and conductivity behavior at high temperatures initially decrease slightly,then drop sharply,and finally decline slowly,which could be attributed to microstructure morphologies and the concentration of oxygen vacancies.

Frequency stability of InP HBT over 0.2 to 220 GHz

The frequency stabilities of lnP DHBTs in a broadband over 1 to 220 GHz are investigated. A hybrid π-topology small-signal model is used to accurately capture the parasitics of devices. The model parameters are extracted from measurements analytically. The investigation results show that the excellent agreement between the measured and simulated data is obtained in the frequency range 200 MHz to 220 GHz. The dominant parameters of the π-topology model, bias conditions and emitter area have significant effects on the stability factor K. The HBT model can be unconditionally stable by reasonable selection of the proper bias condition and the physical layout of the device.

An improved large signal model of InP HEMTs

An improved large signal model for InP HEMTs is proposed in this paper.The channel current and charge model equations are constructed based on the Angelov model equations.Both the equations for channel current and gate charge models were all continuous and high order drivable,and the proposed gate charge model satisfied the charge conservation.For the strong leakage induced barrier reduction effect of InP HEMTs,the Angelov current model equations are improved.The channel current model could fit DC performance of devices.A 2×25μm×70 nm InP HEMT device is used to demonstrate the extraction and validation of the model,in which the model has predicted the DC I–V,C–V and bias related S parameters accurately.