Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP ba...Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.展开更多
文摘Modulation-doped AlGaAs/GaAs structures were grown on GaAs(100) substrate by solid source molecular beam epitaxy(SSMBE) system. The factors which influence the electron mobility were investigated. After growing InP based materials, growth conditions were deteriorated, but by an appropriate method and using reasonable process high electron mobility(77 K) of more than 1.50×10~5 cm^2/(V·s) can still be obtained. The structures and growth conditions have been studied and optimized via Hall measurements. For a typical sample, 2.0 K electron mobility as high as 1.78×10~6 cm^2/(V·s) is achieved, and the quantum Hall oscillation phenomena can be observed.
