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Temperature-dependent efficiency droop behaviors of GaN-based green light-emitting diodes 被引量:2
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作者 江蓉 陆海 +4 位作者 陈敦军 任芳芳 闫大为 张荣 郑有炓 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第4期500-503,共4页
The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temp... The efficiency droop behaviors of GaN-based green light-emitting diodes (LEDs) are studied as a function of temperature from 300 K to 480 K. The overall quantum efficiency of the green LEDs is found to degrade as temperature increases, which is mainly caused by activation of new non-radiative recombination centers within the LED active layer. Meanwhile, the external quantum efficiency of the green LEDs starts to decrease at low injection current level (<1 A/cm2 ) with a temperature-insensitive peak-efficiency-current. In contrast, the peak-efficiency-current of a control GaN-based blue LED shows continuous up-shift at higher temperatures. Around the onset point of efficiency droop, the electroluminescence spectra of the green LEDs also exhibit a monotonic blue-shift of peak energy and a reduction of full width at half maximum as injection current increases. Carrier delocalization is believed to play an important role in causing the efficiency droop in GaN-based green LEDs. 展开更多
关键词 绿色发光二极管 温度不敏感 GaN 下垂 行为 绿色LED 外部量子效率 注入电流
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