From Topological Nodal-Line Semimetals to Quantum Spin Hall Insulators in Tetragonal SnX Monolayers(X=F,Cl,Br,I)

Two-dimensional(2D)topological materials have recently garnered significant interest due to their profound physical properties and promising applications for future quantum nanoelectronics.Achieving various topological states within one type of materials is,however,seldom reported.Based on first-principles calculations and tightbinding models,we investigate topological electronic states in a novel family of 2D halogenated tetragonal stanene(T-SnX,X=F,Cl,Br,I).All the four monolayers are found to be unusual topological nodal-line semimetals(NLSs),protected by a glide mirror symmetry.When spin-orbit coupling(SOC)is turned on,T-SnF and TSnCl are still ascertained as topological NLSs due to the remaining band inversion,primarily composed of Sn pxy orbitals,while T-Sn Br and T-SnI become quantum spin Hall insulators.The phase transition is ascribed to moving up in energy of Sn s orbitals and increasing of SOC strengths.The topology origin in the materials is uniformly rationalized through elementary band representations.The robust and diverse topological states found in the 2D T-SnX monolayers position them as an excellent material platform for development of innovative topological electronics.

DASP: Defect and Dopant ab-initio Simulation Package

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, the Defect and Dopant ab-initio Simulation Package(DASP), which is composed of four modules for calculating:(ⅰ) elemental chemical potentials,(ⅱ) defect(dopant) formation energies and charge-state transition levels,(ⅲ) defect and carrier densities and(ⅳ) carrier dynamics properties of high-density defects. DASP uses the materials genome database for quick determination of competing secondary phases when calculating the elemental chemical potential that stabilizes compound semiconductors. DASP calls the ab-initio software to perform the total energy, structural relaxation and electronic structure calculations of the defect supercells with different charge states, based on which the defect formation energies and charge-state transition levels are calculated. Then DASP can calculate the equilibrium densities of defects and electron and hole carriers as well as the Fermi level in semiconductors under different chemical potential conditions and growth/working temperature. For high-density defects, DASP can calculate the carrier dynamics properties such as the photoluminescence(PL) spectrum and carrier capture cross sections which can interpret the deep level transient spectroscopy(DLTS). Here we will show three application examples of DASP in studying the undoped GaN, C-doped GaN and quasi-one-dimensional SbSeI.