Orthogonal frequency division multiplexing(OFDM) is an attractive technology to provide immense improvement in wireless transmission capacity but high peak-to-average power ratio(PAPR) is a major drawback of OFDM syst...Orthogonal frequency division multiplexing(OFDM) is an attractive technology to provide immense improvement in wireless transmission capacity but high peak-to-average power ratio(PAPR) is a major drawback of OFDM system.Selected mapping(SLM) scheme has good performance for PAPR reduction.It requires the transmitting data to be multiplied by random phase sequences.However,the sequences are pseudo-random which will decrease the method effectiveness.Exhaustive entropy is introduced in this paper which can identify the strength of random phase sequences property.Then an exhaustive entropy based on SLM method is proposed.The scheme improves the effectiveness of random phase sequences by selecting the larger exhaustive entropy of them.The simulation results show that the PAPR reduction performance is better than that of conventional SLM through this method.展开更多
A kind of non-conjugated polymer memory material, poly（N-vinylcarbazole）, is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-...A kind of non-conjugated polymer memory material, poly（N-vinylcarbazole）, is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-tin- oxide/poly（N-vinylcarbazole）/Al and an n-type metal-oxide-semiconductor field effect transistor. The memristor on the basis of a nano poly（N-vinylcarbazole） film exhibits electrical bistability and flash memory features, for which the switching-on voltage is -1 V and the on/off current ratio approaches 104. At ambient temperature, the memory circuit possesses higher reliability within the programming time 104 s. The output voltage is dose to 0.5 V during logic 1, while it is approximately 14mV in the logic 0. This paves the way for the study on the technology concerning the binary encoding and data storage of nonvolatile memories.展开更多
基金Sponsored by the National Natural Science Foundation of China (Grant No. 61101126)the Postdoctoral Science Foundation of China (Grant No.2011M500664)
文摘Orthogonal frequency division multiplexing(OFDM) is an attractive technology to provide immense improvement in wireless transmission capacity but high peak-to-average power ratio(PAPR) is a major drawback of OFDM system.Selected mapping(SLM) scheme has good performance for PAPR reduction.It requires the transmitting data to be multiplied by random phase sequences.However,the sequences are pseudo-random which will decrease the method effectiveness.Exhaustive entropy is introduced in this paper which can identify the strength of random phase sequences property.Then an exhaustive entropy based on SLM method is proposed.The scheme improves the effectiveness of random phase sequences by selecting the larger exhaustive entropy of them.The simulation results show that the PAPR reduction performance is better than that of conventional SLM through this method.
基金Supported by the China Postdoctoral Science Foundation under Grant No 2011M50070
文摘A kind of non-conjugated polymer memory material, poly（N-vinylcarbazole）, is used to investigate silicon-based storage performance with the fact that the one-bit storage cell circuit consists of a sandwiched indium-tin- oxide/poly（N-vinylcarbazole）/Al and an n-type metal-oxide-semiconductor field effect transistor. The memristor on the basis of a nano poly（N-vinylcarbazole） film exhibits electrical bistability and flash memory features, for which the switching-on voltage is -1 V and the on/off current ratio approaches 104. At ambient temperature, the memory circuit possesses higher reliability within the programming time 104 s. The output voltage is dose to 0.5 V during logic 1, while it is approximately 14mV in the logic 0. This paves the way for the study on the technology concerning the binary encoding and data storage of nonvolatile memories.
