The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Based on the exact resultant solution of two-dimensional Poisson＇s equation in strained Si and Si1-xCex layer, a simple and accurate two-dimensional.analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator （SGOI） MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects （SCE）, the drain-induced barrier-lowering （DIBL） and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

Two-dimensional analytical models for asymmetric fully depleted double-gate strained silicon MOSFETs

This paper develops the simple and accurate two-dimensional analytical models for new asymmetric double-gate fully depleted strained-Si MOSFET. The models mainly include the analytical equations of the surface potential, surface electric field and threshold voltage, which are derived by solving two dimensional Poisson equation in strained-Si layer. The models are verified by numerical simulation. Besides offering the physical insight into device physics in the model, the new structure also provides the basic designing guidance for further immunity of short channel effect and draininduced barrier-lowering of CMOS-based devices in nanometre scale.

Two-dimensional threshold voltage analytical model of DMG strained-silicon-on-insulator MOSFETs

For the first time,a simple and accurate two-dimensional analytical model for the surface potential variation along the channel in fully depleted dual-material gate strained-Si-on-insulator（DMG SSOI） MOSFETs is developed.We investigate the improved short channel effect（SCE）,hot carrier effect（HCE）,drain-induced barrier-lowering（DIBL） and carrier transport efficiency for the novel structure MOSFET.The analytical model takes into account the effects of different metal gate lengths,work functions,the drain bias and Ge mole fraction in the relaxed SiGe buffer.The surface potential in the channel region exhibits a step potential,which can suppress SCE,HCE and DIBL.Also,strained-Si and SOI structure can improve the carrier transport efficiency,with strained-Si being particularly effective.Further, the threshold voltage model correctly predicts a＂rollup＂in threshold voltage with decreasing channel length ratios or Ge mole fraction in the relaxed SiGe buffer.The validity of the two-dimensional analytical model is verified using numerical simulations.

A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical simulator.Besides offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.