A combined Ag nanoparticle with an insulating or conductive layer structure has been designed tor molecular detection using surface enhanced Raman scattering microscopy. Optical absorption studies revealed localized s...A combined Ag nanoparticle with an insulating or conductive layer structure has been designed tor molecular detection using surface enhanced Raman scattering microscopy. Optical absorption studies revealed localized surface plasmon resonance, which shows regular red shift with increasing environmental dielectric constant. With the combined structure of surface enhanced Raman scattering substrates and rhodamine 6C as a test molecule, the results in this paper show that the absorption has a linear relationship with the local electromagnetic field for insulating substrates, and the electrical property of the substrate has a non-negligible effect on the intensity of the local electromagnetic field and hence the Raman enhancement.展开更多
This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (SMIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ...This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (SMIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/(V· s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.展开更多
This paper found that the crystalline volume ratio (Xc) of μc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of μc-Si de...This paper found that the crystalline volume ratio (Xc) of μc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of μc-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the ‘hills' on SiNx substrate would promote the crystalline growth of μc-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the μc-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of μc-Si TFT and a-Si TFT is shown in this paper.展开更多
The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobili...The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.展开更多
基金Project supported by Hi-Tech Research and Development Program of China(Grant Nos.2007AA05Z436 and 2009AA050602)Science and Technology Foundation of Tianjin(Grant No.08ZCKFGX03500)+3 种基金National Basic Research Program of China(Grant Nos.2006CB202602 and 2006CB202603)National Natural Science Foundation of China(Grant No.60976051)International Cooperation Project between China-Greece Government(Grant Nos.2006DFA62390 and 2009DFA62580)Program for New Century Excellent Talents in University of China(Grant No.NCET-08-0295)
文摘A combined Ag nanoparticle with an insulating or conductive layer structure has been designed tor molecular detection using surface enhanced Raman scattering microscopy. Optical absorption studies revealed localized surface plasmon resonance, which shows regular red shift with increasing environmental dielectric constant. With the combined structure of surface enhanced Raman scattering substrates and rhodamine 6C as a test molecule, the results in this paper show that the absorption has a linear relationship with the local electromagnetic field for insulating substrates, and the electrical property of the substrate has a non-negligible effect on the intensity of the local electromagnetic field and hence the Raman enhancement.
基金supported by Key Project of National Natural Science Foundation of China (Grant No 60437030)"863" Project of National Ministry of Science and Technology of China (Grant No 2004AA33570)Tianjin Natural Science Foundation of China (Grant No 05YFJMJC01400)
文摘This paper investigates a simplified metal induced crystallization (MIC) of a-Si, named solution-based MIC (SMIC). The nickel inducing source was formed on a-Si from salt solution dissolved in de-ionized water or ethanol, a-Si thin film was deposited with low pressure chemical vapour deposition or plasma enhanced chemical vapour deposition as precursor material for MIC. It finds that the content of nickel source formed on a-Si can be controlled by solution concentration and dipping time. The dependence of crystallization rate of a-Si on annealing time illustrated that the linear density of nickel source was another critical factor that affects the crystallization of a-Si, besides the diffusion of nickel disilicide. The highest electron Hall mobility of thus prepared S-MIC poly-Si is 45.6 cm^2/(V· s). By using this S-MIC poly-Si, thin film transistors and display scan drivers were made, and their characteristics are presented.
基金Project supported by the ‘863' Project of National Ministry of Science and Technology (Grant No 2004AA33570), Key Project of NSFC (Grant No 60437030) and Tianjin Natural Science Foundation (Grant No 05YFJMJC01400).
文摘This paper found that the crystalline volume ratio (Xc) of μc-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of μc-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the ‘hills' on SiNx substrate would promote the crystalline growth of μc-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the μc-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of μc-Si TFT and a-Si TFT is shown in this paper.
基金supported by the National High Technology Research and Development Program of China (No.2008AA03A335)the National Natural Science Foundation of China (No. 60437030)the Key Laboratory of Advanced Display and System Applications (Shanghai University),Ministry of Education of China (No.P200903)
文摘The hydrogen passivation is adopted to enhance the performance of poly-Si crystallized by YAG laser annealing(LA polySi).The effects of passivation time,passivation power and passivation temperature on the hall mobility of the LA poly-Si are investigated and the mechanism of the hydrogen passivation is preliminarily analyzed.It is found that the effect of the hydrogen passivation on the qulity of YAG laser annealed poly-Si is also correlated with the deposition method and the defect type in it.