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Nanoscale structural investigation of Zn_(1-x)Mg_(x)O alloy films on polar and nonpolar ZnO substrates with different Mg contents
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作者 梁信 周华 +3 位作者 王惠琼 张丽华 Kim Kisslinger 康俊勇 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第9期393-399,共7页
Zn_(1-x)Mg_(x)O alloy films are important deep ultraviolet photoelectric materials.In this work,we used plasma-assisted molecular beam epitaxy to prepare Zn_(1-x)Mg_(x)O films with different magnesium contents on pola... Zn_(1-x)Mg_(x)O alloy films are important deep ultraviolet photoelectric materials.In this work,we used plasma-assisted molecular beam epitaxy to prepare Zn_(1-x)Mg_(x)O films with different magnesium contents on polar(0001)and nonpolar(1010)ZnO substrates.The nanoscale structural features of the grown alloy films as well as the interfaces were investigated.It was observed that the cubic phases of the alloy films emerged when the Mg content reached 20%and 37%for the alloy films grown on the(0001)and(1010)ZnO substrates,respectively.High-resolution transmission electron microscopy images revealed cubic phases without visible hexagonal phases for the alloy films with more than 70%magnesium,and the cubic phases exhibited three-fold and two-fold rotations for the alloy films on the polar(0001)and nonpolar(1010)ZnO substrates,respectively.This work aims to provide references for monitoring the Zn_(1-x)Mg_(x)O film structure with respect to different substrate orientations. 展开更多
关键词 Zn_(1-x)Mg_(x)O films molecular beam epitaxy phase separation transmission electron microscopy
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Cubic ZnO films obtained at low pressure by molecular beam epitaxy
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作者 王小丹 周华 +5 位作者 王惠琼 任飞 陈晓航 詹华瀚 周颖慧 康俊勇 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第9期454-458,共5页
A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the Mg O(001) substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cu... A zinc oxide thin film in cubic crystalline phase, which is usually prepared under high pressure, has been grown on the Mg O(001) substrate by a three-step growth using plasma-assisted molecular beam epitaxy. The cubic structure is confirmed by in-situ reflection high energy electron diffraction measurements and simulations. The x-ray photoelectron spectroscopy reveals that the outer-layer surface of the film(less than 5 nm thick) is of ZnO phase while the buffer layer above the substrate is of ZnMgO phase, which is further confirmed by the band edge transmissions at the wavelengths of about 390 nm and 280 nm, respectively. The x-ray diffraction exhibits no peaks related to wurtzite ZnO phase in the film. The cubic ZnO film is presumably considered to be of the rock-salt phase. This work suggests that the metastable cubic ZnO films, which are of applicational interest for p-type doping, can be epitaxially grown on the rock-salt substrates without the usually needed high pressure conditions. 展开更多
关键词 ZnO film rock-salt structure molecular beam epitaxy reflection high energy electron diffraction
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利用AlGaN耦合作用调控WS_(2)层内和层间谷激子
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作者 曾鑫龙 康闻宇 +8 位作者 周小文 李玲龙 夏源政 刘海洋 杨成彪 吴雅苹 吴志明 李煦 康俊勇 《Science China Materials》 SCIE EI CAS CSCD 2023年第1期202-210,共9页
二维材料中的激子跃迁和能谷极化过程具有丰富的能谷物理特性,因此具有极大的研究价值.本文发现,单层和双层WS_(2)中激子和能谷特性可以通过耦合不同掺杂浓度的AlGaN进行有效调控.当WS_(2)和n型AlGaN耦合时,会出现显著的激子能量红移.... 二维材料中的激子跃迁和能谷极化过程具有丰富的能谷物理特性,因此具有极大的研究价值.本文发现,单层和双层WS_(2)中激子和能谷特性可以通过耦合不同掺杂浓度的AlGaN进行有效调控.当WS_(2)和n型AlGaN耦合时,会出现显著的激子能量红移.值得一提的是,来自AlGaN的层间电荷转移作用会促使双层WS_(2)形成II型能带,进而产生层间激子跃迁.层内激子峰和层间激子峰的能量和强度还可以通过双层WS_(2)中的转角进行调控.在13 K条件下,通过耦合n型AlGaN,单层WS_(2)的谷极化率高达82.2%.这是由于AlGaN的电子-声子相互作用会带来更高的激子衰减速率,且掺杂导致的载流子屏蔽效应会减少层间谷散射.层间激子的谷极化率明显高于层内激子,这是由于在层间激子中电子-空穴相互作用较弱,导致层间谷散射受到抑制.本文提出了一种简便有效的方法来调控二维材料的激子特性,在单层WS_(2)中实现了极高的谷极化,并在双层WS_(2)中诱导出层间激子.这些发现将激发谷激子物理学的创新探索,并推动新兴的谷电子器件的应用研究. 展开更多
关键词 ALGAN 二维材料 激子 屏蔽效应 衰减速率 极化过程 创新探索 极化率
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