Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandw...Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.展开更多
The whole chemical etching process on a P-type polycrystalline silicon substrate with resistivity 1-2Ω·cm is described. The formation mechanism of porous polycrystalline silicon（PPS） microstructure was investi...The whole chemical etching process on a P-type polycrystalline silicon substrate with resistivity 1-2Ω·cm is described. The formation mechanism of porous polycrystalline silicon（PPS） microstructure was investigated. Those how the initial pits were formed and an uniform morphology of PPS was obtained are explained. Two types of etching mechanism were characterized as defect control reaction and diffusion control reaction. The morphology formed after the isotropic acidic solution etching with different etching time and HF/HNO3 concentration was compared with the effect of the same etching process after anisotropic alkaline etching. The study showed that the thickness of porous polycrystalline silicon layer with chemical acidic etching entirely depended on the existence of various types of defects.展开更多
文摘Crystalline TiO2 thin films were prepared by DC reactive magnetron sputtering on indium-tin oxide（ITO） thin film deposited on quartz substrate, the photoconductive UV detector on TiO2 thin films was based on a sandwich structure of C/ TiO2/ITO. The measurement of the I-V characteristics for these devices shows good ohmic contact. The photoresponse of TiO2 thin films was analyzed at different bias voltage. The detector shows a good photoresponse with a rise time of 2 s and a fall time of 40 s, the photocurrent is linearly increased with the bias voltage.
基金Key Projects of S & T Department for Henan Province(0424210016)
文摘The whole chemical etching process on a P-type polycrystalline silicon substrate with resistivity 1-2Ω·cm is described. The formation mechanism of porous polycrystalline silicon（PPS） microstructure was investigated. Those how the initial pits were formed and an uniform morphology of PPS was obtained are explained. Two types of etching mechanism were characterized as defect control reaction and diffusion control reaction. The morphology formed after the isotropic acidic solution etching with different etching time and HF/HNO3 concentration was compared with the effect of the same etching process after anisotropic alkaline etching. The study showed that the thickness of porous polycrystalline silicon layer with chemical acidic etching entirely depended on the existence of various types of defects.
