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Evidence of Ultrafast Energy Exchange-Induced Soft' Mode of Phonons and Lattice Instability: a Nanotime Effect 被引量:2
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作者 朱贤方 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第3期737-740,共4页
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Nanocavity Shrinkage and Preferential Amorphization during Irradiation in Silicon 被引量:1
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作者 朱贤方 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第3期657-660,共4页
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Photoluminescence Investigation of Two-Dimensional Electron Gas in an Undoped AlxGa1-xN/GaN Heterostructure
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作者 韩修训 吴洁君 +4 位作者 李杰民 丛光伟 刘祥林 朱勤生 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第8期2096-2099,共4页
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Realization of Low Threshold of InGaAs/InA1As Quantum Cascade Laser
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作者 刘峰奇 金鹏 +1 位作者 王占国 李成明 《Chinese Physics Letters》 SCIE CAS CSCD 2003年第9期1478-1481,共4页
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Modulation Spectroscopy of GaAs Covered by InAs Quantum Dots
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作者 金鹏 李乙钢 《Chinese Physics Letters》 SCIE CAS CSCD 2002年第7期1010-1012,共3页
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Rapid Thermal Annealing Effects on Structural and Optical Properties of Self-Assembled InAs/GaAs Quantum Dots Capped by InAIAs/InGaAs Layers
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作者 吕威 黎大兵 +4 位作者 张子旸 李超荣 张泽 徐波 王占国 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期967-970,共4页
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Effect of Misfit Dislocation Originated from Strained Layer on Photoluminescence Properties of InxGa1-xN/GaN Multiple Quantum Wells
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作者 吕威 黎大兵 +2 位作者 李超荣 陈岗 张泽 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第4期971-974,共4页
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Room-temperature ferro- magnetic semiconductor MnxGa(1-x)Sb
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作者 CHENNuofu ZHANGFuqiang 《Chinese Science Bulletin》 SCIE EI CAS 2003年第6期516-518,共3页
Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room tem... Ferromagnetic semiconductor MnxGa1-xSb single crystals were fabricated by Mn-ions implantation, deposition, and the post annealing. Magnetic hysteresis-loops in the MnxGa1-xSb single crystals were obtained at room temperature (300 K). The structure of the ferromagnetic semiconductor MnxGa1-xSb single crystal was analyzed by X- ray diffraction. The distribution of carrier concentrations in MnxGa1-xSb was investigated by electrochemical capaci-tance-voltage profiler. The content of Mn in MnxGa1-xSb varied gradually from x = 0.09 near the surface to x = 0 in the wafer inner analyzed by X-ray diffraction. Electro-chemical capacitance-voltage profiler reveals that the con-centration of p-type carriers in MnxGa1-xSb is as high as 1×1021 cm-3, indicating that most of the Mn atoms in MnxGa1-xSb take the site of Ga, and play a role of acceptors. 展开更多
关键词 铁磁半导体 室温 MnxGa1-xSb 锌掺杂 锰离子 磁滞回路 载流子密度
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