In this study, we demonstrate the performance of silicon nanowire （SiNW） n-metal oxide semiconductor （MOS） and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of ...In this study, we demonstrate the performance of silicon nanowire （SiNW） n-metal oxide semiconductor （MOS） and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be controlled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics.展开更多
In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect tra...In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.展开更多
文摘In this study, we demonstrate the performance of silicon nanowire （SiNW） n-metal oxide semiconductor （MOS） and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be controlled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics.
文摘In this study, we propose complementary metal-oxide-semiconductor （CMOS） NOR logic gates consisting of silicon nanowire （NW） arrays on bendable substrates. A circuit consisting of two p-channel NW field-effect transistors （NWFETs） in series and two n-channel NWFETs in parallel is constructed to operate a two- input CMOS NOR logic gate. The NOR logic gates operate at a low supply voltage of 1 V with a rail-to-rail logic swing and a high voltage gain of approximately -3.0. The exact NOR logic functionality is achieved owing to the superior electrical characteristics of the well-aligned p- and n-NWFETs, which are obtained using conventional Si-based CMOS technology. Moreover, the NOR logic gates exhibit stable characteristics and have good mechanical properties. The proposed bendable NW CMOS NOR logic gates are promising building blocks for future bendable integrated electronics.
