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Graded Heterojunction of AlGaInP High-brightness Light Emitting Diodes
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作者 LIULu FANGuang-han LIAOChang-jun 《Semiconductor Photonics and Technology》 CAS 2004年第2期86-92,共7页
A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and... A simple model of the graded heterojunction in AlGaInP compound semiconductors was introduced to analyze the band profile. The band profiles are analyzed with the different grading ways but the same grading length and under the different doping densities. The effect of the different grading lengths on the surplus of the potential of the spike to the potential of N region are also analyzed under the different doping densities.Through the experiments,it proves that the performances of high brightness light emitting diodes can be improved by the effects of the graded heterojunction. 展开更多
关键词 ALGAINP HETEROJUNCTION LED
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