Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodiu...Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodium thiosulfate on the electrochemical deposition of Cu2O films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at - 0.58 V vs. SCE and characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FrIR）, scanning electron microscopy （SEM）, and optical, photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu2O films had a pure cubic phase with a marked preferential orientation peak along （200） plane and with lattice constants a = b = c = 0.425 rim. FFIR results confirmed the presence of Cu2O films at peak 634 cm 1. SEM images of Cu2O films showed a better compactness and spherical-shaped composition. Optical properties of Cu2O films reveal a high optical transmission （〉80%） and high absorption coefficient （α 〉 104 cm- 1 ） in visiblelight region. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu2O films had n-type semiconductor conduction, which confirmed by Hall Effect measurements. Electrical properties of Cu2O films showed a low electrical resistivity of 61.30 Ω. cm-1, carrier concentration of-4.94×1015cm -3andmobility of20.61cm2.V 1,s-l.Theobtained Cu2O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells,展开更多
基金Supported by the Algerian Ministry of Higher Education and Scientific Research(CNEPRU project number:J0101520090018)
文摘Cuprous oxide （Cu2O） thin films have been grown by electrodeposition technique onto ITO-coated glass substrates from aqueous copper acetate solutions with addition of sodium thiosulfate at 60 ℃ The effects of sodium thiosulfate on the electrochemical deposition of Cu2O films were investigated by cyclic voltammetry and chronoamperometry techniques. Deposited films were obtained at - 0.58 V vs. SCE and characterized by X-ray diffraction （XRD）, Fourier transform infrared spectroscopy （FrIR）, scanning electron microscopy （SEM）, and optical, photoelectrochemical and electrical measurements. X-ray diffraction results indicated that the synthesized Cu2O films had a pure cubic phase with a marked preferential orientation peak along （200） plane and with lattice constants a = b = c = 0.425 rim. FFIR results confirmed the presence of Cu2O films at peak 634 cm 1. SEM images of Cu2O films showed a better compactness and spherical-shaped composition. Optical properties of Cu2O films reveal a high optical transmission （〉80%） and high absorption coefficient （α 〉 104 cm- 1 ） in visiblelight region. The optical energy band gap was found to be 2.103 eV. Photoelectrochemical measurements indicated that Cu2O films had n-type semiconductor conduction, which confirmed by Hall Effect measurements. Electrical properties of Cu2O films showed a low electrical resistivity of 61.30 Ω. cm-1, carrier concentration of-4.94×1015cm -3andmobility of20.61cm2.V 1,s-l.Theobtained Cu2O thin films with suitable properties are promising semiconductor material for fabrication of photovoltaic solar cells,
