In this work,a Cu_(2)ZnSnS_(4)(CZTS)ingot is grown via a melting method,then cooled;the resulting molten stoichiomet-ric mixture is sealed off in a quartz ampoule under vacuum.The CZTS powder chemical composition anal...In this work,a Cu_(2)ZnSnS_(4)(CZTS)ingot is grown via a melting method,then cooled;the resulting molten stoichiomet-ric mixture is sealed off in a quartz ampoule under vacuum.The CZTS powder chemical composition analyses are determined us-ing energy dispersive spectroscopy,and revealing the slightly Cu-rich and Zn-poor character of the ingot.Powder X-ray diffrac-tion analysis reveals a crystalline structure with a kesterite phase formation,and a preferred orientation of(112)plane.The lat-tice constants of the a-and c-axes,calculated based on the XRD analyses,are a=5.40Åand c=10.84Å.Based on Hall measure-ments at room temperature,we find that the crystal exhibits p-type conductivity,with a high concentration of 1018 cm^(-3),a res-istivity of 1.7Ωcm,and a mobility of 10.69 cm^(2)V-1s-1.Activation energies are estimated based on an Arrhenius plot of conductiv-ity versus 1/T,for a temperature range of 80-350 K,measuring 35 and 160 meV in low-and high-temperature regimes,respect-ively,which is attributed to complex defects(2CuZn+SnZn)and antisite defects(CuZn),respectively.The observed scattering mech-anisms are attributed to ionized impurities and acoustic phonons at low and high temperatures,respectively.The extracted band-gap is 1.37 eV.展开更多
文摘In this work,a Cu_(2)ZnSnS_(4)(CZTS)ingot is grown via a melting method,then cooled;the resulting molten stoichiomet-ric mixture is sealed off in a quartz ampoule under vacuum.The CZTS powder chemical composition analyses are determined us-ing energy dispersive spectroscopy,and revealing the slightly Cu-rich and Zn-poor character of the ingot.Powder X-ray diffrac-tion analysis reveals a crystalline structure with a kesterite phase formation,and a preferred orientation of(112)plane.The lat-tice constants of the a-and c-axes,calculated based on the XRD analyses,are a=5.40Åand c=10.84Å.Based on Hall measure-ments at room temperature,we find that the crystal exhibits p-type conductivity,with a high concentration of 1018 cm^(-3),a res-istivity of 1.7Ωcm,and a mobility of 10.69 cm^(2)V-1s-1.Activation energies are estimated based on an Arrhenius plot of conductiv-ity versus 1/T,for a temperature range of 80-350 K,measuring 35 and 160 meV in low-and high-temperature regimes,respect-ively,which is attributed to complex defects(2CuZn+SnZn)and antisite defects(CuZn),respectively.The observed scattering mech-anisms are attributed to ionized impurities and acoustic phonons at low and high temperatures,respectively.The extracted band-gap is 1.37 eV.
