Realization of High Efficient Ferroelectric Perovskite Nanoparticles in Biopolymer-Matrix Solar Cells under Low Lighting

The idea to use ferroelectric materials (PZN-PT) came from the fact that the ferroelectric nature could facilitate electric charges accumulation on the interfaces of the solar cell. Thus, it would increase the open circuit voltage Voc which could reach more than 10 V. This would directly impact the efficiency which is proportional to Voc, thus hoping to obtain solar efficiency never equaled by the halide perovskites which are less stable and less resistant in aggressive environments. In this work, the solar cells produced gave an exceptional record efficiency of 39.32% with a very high open circuit voltage (Voc) of 3.50 V, a short-circuit current density (Jsc) of 0.118 mA/cm2 and an FF of 0.72 measured in the positive polarization direction under 3825 lux (5.6 W/m2) lighting. The negative polarization direction under 4781 lux (7 W/m2) lightning gave a current density of 2 mA/cm2, an open circuit voltage of 2.30 V and an FF of 0.35.

Thermochemical Characterization of Casamance Biomass Residues for Production of Combustibles Briquettes

The development of alternatives energies illustrates the common interest of all countries in reducing greenhouse gas emissions and combating climate change. Thermochemical treatment of municipal solid waste, agricultural and forestry wastes is a major challenge for this XXIst century to replace petroleum fuels. Thermogravimetric analysis (TGA) makes it possible to elucidate the thermal behavior of Casamance (Senegal) biomass residues, mass losses and decomposition rate, under inert (N2) atmosphere and oxidizing (O2) atmosphere. Carbonization and briquetting techniques of these various residues encountered in this part of Senegal country, by densification in order to produce fuel briquettes (call biochars) will be used to improve stoves for cooking. Samples used in this study are peanuts shells (PNS), cashew nut shells (CNS), palm nut shells (PLS) and millet stems (MS). Elemental and approximate analyses make it possible to determine the CHNSO* composition, volatile matter, fixed carbon and ashes content of the samples used. Higher heating values (HHV) of the former residues are ranging from 28.60 MJ·kg-1, 26.51 MJ·kg-1, 29.69 MJ·kg-1 and 24.93 MJ·kg-1 respectively. The chars are obtained by slow pyrolysis with a heating rate of 5°C·min-1 from ambient temperature up to 800°C under inert atmosphere. The morphology of the samples is different for the four biomasses studied, from biomass in the form of wood fibers to a more compact biomass. The parietal composition of different samples presented was determined by Van Soest method using neutral detergents (NDS), acid detergent (ADS) and sulfuric acid (H2SO4, 72%);to solubilize successively extractable, hemicellulose and cellulose respectively;lignin was obtained by balance (Table 2). The samples show a high level of cellulose, this pseudo-component is very rich in carbon directly linked to the calorific value, whose values vary from 32.35%;24.20%;34.94% and 39.67% for PNS, PLS, CNS and MS respectively.

Determination of the Vibro-Rotational Constants, the Dipole Moment’s Function and the Intensities of the HTO’s ν1 (ν3 by Usual Convention) Band

In the first part of this paper, an analysis of the high-resolution spectrum of the HTO molecule ν1(ν3) band, from 3630 to3950 cm–1, was undertaken. The rotational transition of this band was assigned using combination differences. Their wavenumbers were analyzed with a least squares fit program in order to obtain spectroscopic constants. A perturbed state has been evidenced. In the second part, with a view towards building a spectroscopic data base, a calculation of the dipolar momentum function was undertaken.

Optimization of 6,13Bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) Organic Field Effect Transistor: Annealing Temperature and Solvent Effects

In this contribution, we report on the effect of solvents with different boiling points and annealing temperature on the performance of TIPS-pentacene transistors. Several solvents have been used for TIPS-pentacene thin film processing: toluene, chlorobenzene and tetrahy-drofuran. To study the influence of solvent and temperature;the electrical parameters of TIPS-pentacene field effect transistor were measured. The highest values of mobilities were 7.1 × 10-3 cm2·V-1·s-1, 4.5 × 10-3?cm2·V-1·s-1 and 1.43 × 10-3 cm2·V-1·s-1 respectively for TIPS-pentacene field effect transistor using chlorobenzene, toluene and tetrahydrofuran and annealed respectively at 120°C, 150°C and 120°C. We have correlated these electrical performances with AFM images in order to point out the role of morphological properties. It is found that the grain size, and roughness highly affect the electrical parameters.

New Procedure to Obtain Specific and High Absorbent Silicon Nanotextures: Inverted Pyramids, Cubic Nano-Microholes, Spiroconical Nano-Microholes and Rhombohedral-Stared Nanosheet Bouquets (Nanobuckets)

The present work relates to a process for silicon surface texturing for preparing large-area, silicon nanotextures on silicon substrates at ambient temperature by assisted chemical etching. A novel strategy comprises of two fundamental steps (metal-assisted chemical etching (MACE) and solution post-treatment) of using the silver catalyst to obtain specific nano- or micro-textures. The strategy is based on metal-induced (Ag) local oxidation and dissolution of a silicon substrate in three different concentrations of aqueous fluoride solution with the post-treatment solution. The etching technique is dependent on the etching time and concentration of aqueous fluoride solution. Therefore, detailed scanning electron microscopy observations reveal specifics shapes as inverted pyramids, cubic nano-microholes, spiroconical nano-microholes and rhombohedral-stared nanosheet bouquets (called Nanobukets), obtained for the first time on a (100) silicon surface by this new variant of the MACE method named Double Etching Method (DEM). Silicon nanostructures are used in many nanotechnology applications such as nano-microelectronics, optoelectronics or biomedical applications. UV-Visible spectrometry measurements carried out made it possible to obtain the lowest reflectance and highest absorbance values who are 3% and 97%, respectively for the rhomboedral-stared nanosheet bouquets on (100) crystalline silicon substrates in the UV-visible-NIR wavelength range from 300 to 1200 nm.

Mn Effect on Nonlinear and Structural Properties of <110>Oriented PZN-4.5PT Single Crystals

Ferroelectric single crystals Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) are promising full materials for non resonant or large bandwidth transducers due to the large values of their piezoelectric properties (d ij , k ij ) and their low mechanical quality factor (Q ij ). Many studies on oriented PZN-4.5PT single crystals were carried out but it is very difficult to find research findings on oriented Mn doped PZN-PT. Thus, investigations were made using XRD, Raman and EPR characterization for oriented PZN-4.5PT grown through the Flux method. Mn doping effect on structural, dielectric, mechanical and piezoelectric properties with two values of Mn percentage (1 and 2 mol%) are also reported in this paper. Through the XRD study, the lattice parameters of doped PZN-PT crystals are slightly increased compared to the undoped one but the Mn didn’t change its structure. The room temperature dielectric permittivity along direction is about 1572 and 1626 (respectively 1% and 2% Mn doped crystals) which are much lower than that of the undoped PZN-4.5PT (2553). The remnant polarization and coercive field of oriented doped crystal measured at 1 KHz are respectively 30 μC/cm2 and 4.30 kV/cm (PZN-4.5PT), 32 μC/cm2 and 6.10 kV/cm (PZN-4.5PT + 1% Mn) and 28 μC/cm2 and 7.30 kV/cm (for the 2% Mn doped crystal). The mechanical quality factor Qm changed from 139 to 441 respectively for the pure and 1% Mn doped single crystals at room temperature while it decreases slightly to 336 for the 2 mol% Mn doped.

Phosphorus Based Ceramics for Positive Electrode Synthesis and Characterization

Historically, the LiCoO2 is the most used as active material for battery positive electrode because of its great potential (3.7 - 4.2 V), its interesting specific capacity (150 mA·h·g-1) and its excellent life cycle [1] 08D0C9EA79F9BACE118C8200AA004BA90B02000000080000000E0000005F005200650066003300390038003500370036003700340032000000 . However, its toxicity, the cobalt cost and its structural instability oriented research towards new materials more stable that can replace it. In another context, hybrid, electrical vehicles and communication (computers and mobile phones...) have increased the scientific and technological research for new materials capable of storing and return energy through a system called accumulator. And research has identified the phosphate olivine structure as the most prolific ceramic material for positive electrode. LiFePO4 is a promising cathode material for Lithium-ion batteries. It provides high thermal stability and is synthesized using low cost materials. Unfortunately LiFePO4 suffers from a low electrical conductivity, which is harmful to its electrochemical performance. Decreasing the particle size, coating the particles with carbon or doping with metal atoms can increase the conductivity of the material. In this paper, we present the synthesis, physico-chemical and electrical characterization of lithium and iron doped Al-phosphorrus-based ceramic. The NPK Fertiliser was used as Al and phosphorus precursors. The powder XRD spectrum shows a possible presence of LiFePO4 and Fe2(PO)3 in theheterostrcture. An important quantity of Al is found by EDX spectra which supposed that the most important based atom is Aluminum and not Phosphorus. This can explain the increase of the conductivity value 102 times more important than those found in the literature for LiFePO4.

Fabrication and Characterization of PZN-4.5PT Inorganic Perovskites Nanoparticles Thin Films Deposited on P-Type Silicon Substrate

This work involves an investigation of nanostructures, microelectronic properties and domain engineering of nanoparticles thin layers of Pb(Zn1/ 3Nb2/3)O3-PbTiO3 (PZN-PT) ferroelectric single crystals deposited on nanostructured silicon substrate. In this study, devices made from PZN-4.5PT nanoparticles thin films successfully deposited on silicon substrate have been studied and discussed. SEM images show the formation of local black circles and hexagonal shapes probably due to the nucleation of a new Si-gel component or phase induced by annealing. Micro Xray Fluorescence mapping shows that the high values of Si and B atoms (&cong;7 and 4 normalized unit respectively) can be explained by the fact that the substrate is p-type silicon. The most interesting result of optical measurements is the very good absorption for all the thin films in UV, Visible and NIR regions with values from 70% to 90% in UV, from 75% to 93% in Visible and NIR. Tauc plots present particularities (rarely encountered behavior) with different segments or absorption changes showing the presence of multiple band gaps coming from the heterogeneity of the thin films (nanowires, gel and nanoparticles). Their values are 1.9 and 2.8 eV for DKRN-Gel, 2.1 and 3.1 eV for DKRN-UD and 2.1 and 3.2 eV for DKRN-D) corresponding respectively to the band gap of nanowires and that of the gel while the last ones correspond to the undoped and doped nanoparticles (3.1 and 3.2 eV respectively).

Dielectric and Ferroelectric Properties of PZN-4.5PT Nanoparticles Thin Films on Nanostructured Silicon Substrate for Ferrophotovoltaic and Energy Storage Application

The integration of ferroelectric materials as thin films has attracted considerable attention these last years thanks to their outstanding performances that allow considering new features for the realization of photovoltaic devices. Our study focuses on investigating structural, dielectric and ferroelectric properties of undoped and Mn doped PZN-4.5PT nanoparticles thin films on Silicon substrate. We fabricate very stable PZN-4.5PT nanoparticles thin films deposited on nanostructured silicon substrate with giant relative dielectric permittivity of 2.76 × 104 and 17.7 × 104 for respectively the undoped and Mn doped thin films. These values are very large compared to those found in single crystals and might be explained by the influence of the gel in which nanoparticles were dispersed. The SEM images show the crystallization of new hexagonal phases on the film surface probably coming from interaction between Si and the gel. The hysteresis loops permitted to determine the spontaneous polarization (Ps), remnant polarization (Pr) and coercive field Ec which are equal to 11.73 &mu;C/cm2, 10.20 &mu;C/cm2 and 20 V/cm, respectively for the undoped nanoparticles thin film and 22.22 &mu;C/cm2, 19.32 &mu;C/cm2 and 20 V/cm respectively for the Mn doped one. These values are high and correspond to the best ones found in literature compared to typical ferroelectric thin films.

Electrical Instability in Pentacene Transistors with Mylar and PMMA/Mylar Gate Dielectrics Transferred by Lamination Process

This study deals with electrical instability under bias stress in pentacene-based transistors with gate dielectrics deposited by a lamination process. Mylar film is laminated onto a polyethylene terephthalate (PET) substrate, on which aluminum (Al) gate is deposited, followed by evaporation of organic semiconductor and gold (Au) source/drain contacts in bottom gate top contact configuration (Device 1). In order to compare the influence of the semiconductor/dielectric interface, a second organic transistor (Device 2) which is different from the Device 1 by the deposition of an intermediate layer of polymethyl methacrylate (PMMA) onto the laminated Mylar dielectric and before evaporating pentacene layer is fabricated. The critical device parameters such as threshold voltage (VT), subthreshold slope (S), mobility (μ), onset voltage (Von) and Ion/Ioff ratio have been studied. The results showed that the recorded hysteresis depend on the pentacene morphology. Moreover, after bias stress application, the electrical parameters are highly modified for both devices according to the regimes in which the transistors are operating. In ON state regime, Device 1 showed a pronounced threshold voltage shift associated to charge trapping, while keeping the μ, Ioff current and S minimally affected. Regardless of whether Device 2 exhibited better electrical performances and stability in ON state, we observed a bias stress-induced increase of depletion current and subthreshold slope in subthreshold region, a sign of defect creation. Both devices showed onset voltage shift in opposite direction.