Thin films of SnSx,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely：tin（II）chloride and tin（IV）chloride,respectively.The solutions were prepare...Thin films of SnSx,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely：tin（II）chloride and tin（IV）chloride,respectively.The solutions were prepared by the dilution of different Sn molarities of the two precursors separately.The precursor molarities were varied from 0.04 to 0.07 mol/L,whereas that of S was fixed at 0.1 mol/L.The present work focuses on the effect of the different precursor’s molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions.X-ray diffraction analysis reveals that the precursor’s molarities alter the grain size of the prepared films,which varied from 8 to 14 nm and from 12 to 16 nm,according to the used precursor.The films analysis by SEM,shows that the SnS2 films are more dense and smooth than the SnS films.The composition of the elements is analysed with an EDX spectrometer,and the obtained result for M（sn）=0：07 mol/L indicates that the atomic ratio of Sn to S is 51.57：48：43 and 36：64 for films synthesized from the first and second precursors respectively.Electrical measurements show that the conductivity behavior depends on the used precursors and their molarities.展开更多
The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ran...The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction（XRD）, scanning electron microscopy（SEM）, optical transmittance spectroscopy（UV–V） and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the（111） direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10^5 and 11 × 10^5 Ω·cm.展开更多
文摘Thin films of SnSx,semiconductors,have been successfully synthesized by ultrasonic spray pyrolysis technique,using two precursors namely：tin（II）chloride and tin（IV）chloride,respectively.The solutions were prepared by the dilution of different Sn molarities of the two precursors separately.The precursor molarities were varied from 0.04 to 0.07 mol/L,whereas that of S was fixed at 0.1 mol/L.The present work focuses on the effect of the different precursor’s molarities on the nature and the properties of the prepared thin films in order to optimize the growth conditions.X-ray diffraction analysis reveals that the precursor’s molarities alter the grain size of the prepared films,which varied from 8 to 14 nm and from 12 to 16 nm,according to the used precursor.The films analysis by SEM,shows that the SnS2 films are more dense and smooth than the SnS films.The composition of the elements is analysed with an EDX spectrometer,and the obtained result for M（sn）=0：07 mol/L indicates that the atomic ratio of Sn to S is 51.57：48：43 and 36：64 for films synthesized from the first and second precursors respectively.Electrical measurements show that the conductivity behavior depends on the used precursors and their molarities.
文摘The aim of this work is to investigate the dependence of Zn S thin films structural and optical properties with the solution flow rate during the deposition using an ultrasonic spray method. The solution flow rate ranged from 10 to 50 m L/h and the substrate temperature was maintained at 450 °C. The effect of the solution flow rate on the properties of Zn S thin films was investigated by X-ray diffraction（XRD）, scanning electron microscopy（SEM）, optical transmittance spectroscopy（UV–V） and the four-point method. The X-ray diffraction analysis showed that the deposited material was pure zinc sulphide, it has a cubic sphalerite structure with preferential orientation along the（111） direction. The grain size values were calculated and found to be between 38 to 82 nm.SEM analysis revealed that the deposited thin films have good adherence to the substrate surfaces, are homogeneous and have high density. The average transmission of all films is up more than 65% in the range wavelength from 200 to 1100 nm and their band gap energy values were found between 3.5–3.92 e V. The obtained film thickness varies from 390 to 1040 nm. Moreover, the electric resistivity of the deposited films increases with the increasing of the solution flow rate between 3.51 × 10^5 and 11 × 10^5 Ω·cm.
