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Schottky photodiode using submicron thick diamond epilayer for flame sensing 被引量:1
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作者 Y.Koide M.Y.Liao +3 位作者 J.Alvarez M.Imura K.Sueishi F.Yoshifusa 《Nano-Micro Letters》 SCIE EI CAS 2009年第1期30-33,共4页
The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor ... The sensing of a flame can be performed by using wide-bandgap semiconductors, which offer a high signal-to-noise ratio since they only response the ultraviolet emission in the flame. Diamond is a robust semiconductor with a wide-bandgap of 5.5 e V, exhibiting an intrinsic solar-blindness for deep-ultraviolet(DUV) detection. In this work, by using a submicron thick boron-doped diamond epilayer grown on a type-Ib diamond substrate, a Schottky photodiode device structure- based flame sensor is demonstrated. The photodiode exhibits extremely low dark current in both forward and reverse modes due to the holes depletion in the epilayer. The photodiode has a photoconductivity gain larger than 100 and a threshold wavelength of 330 nm in the forward bias mode. CO and OH emission bands with wavelengths shorter than 330 nm in a flame light are detected at a forward voltage of-10 V. An alcohol lamp flame in the distance of 250 mm is directly detected without a focusing lens of flame light. 展开更多
关键词 Flame sensing Boron-doped diamond Schottky photodiode
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