Dual-phase coexistence enables to alleviate resistance drift in phase-change films

The amorphous phase-change materials with spontaneous structural relaxation leads to the resistance drift with the time for phase-change neuron synaptic devices. Here, we modify the phase change properties of the conventional Ge_2Sb_2Te_5(GST) material by introducing an SnS phase. It is found that the resistance drift coefficient of SnS-doped GST was decreased from 0.06 to 0.01. It can be proposed that the origin originates from the precipitation of GST nanocrystals accompanied by the precipitation of SnS crystals compared to single-phase GST compound systems. We also found that the decrease in resistance drift can be attributed to the narrowed bandgap from 0.65 to 0.43 eV after SnS-doping. Thus, this study reveals the quantitative relationship between the resistance drift and the band gap and proposes a new idea for alleviating the resistance drift by composition optimization, which is of great significance for finding a promising phase change material.

SWIR FluorescenceImaging In Vivo Monitoring and Evaluating Implanted M2 Macrophages in Skeletal Muscle Regeneration

Skeletal muscle has a robust regeneration ability that is impaired by severe injury,disease,and aging.resulting in a decline in skeletal muscle function.Therefore,improving skeletal muscle regeneration is a key challenge in treating skeletal muscle-related disorders.Owing to their significant role in tissue regeneration,implantation of M2 macrophages(M2MФ)has great potential for improving skeletal muscle regeneration.Here,we present a short-wave infrared(SWIR)fluorescence imaging technique to obtain more in vivo information for an in-depth evaluation of the skeletal muscle regeneration effect after M2MФtransplantation.SWIR fluorescence imaging was employed to track implanted M2MФin the injured skeletal muscle of mouse models.It is found that the implanted M2MФaccumulated at the injury site for two weeks.Then,SWIR fluorescence imaging of blood vessels showed that M2MФimplantation could improve the relative perfusion ratio on day 5(1.09±0.09 vs 0.85±0.05;p=0.01)and day 9(1.38±0.16 vs 0.95±0.03;p=0.01)post-injury,as well as augment the degree of skeletal muscle regencration on day 13 post-injury.Finally,multiple linear regression analyses determined that post-injury time and relative perfusion ratio could be used as predictive indicators to evaluate skeletal muscle regeneration.These results provide more in vivo details about M2MФin skeletal muscle regeneration and confirm that M2MФcould promote angiogenesis and improve the degree of skeletal muscle repair,which will guide the research and development of M2MФimplantation to improve skeletal muscle regeneration.

Vein visualization enhancement by dual-wavelength phase-locked denoising technology

Visual near-infrared imaging equipment has broad applications in various fields such as venipuncture,facial injections,and safety verification due to its noncontact,compact,and portable design.Currently,most studies utilize near-infrared single-wavelength for image acquisition of veins.However,many substances in the skin,including water,protein,and melanin can create significant background noise,which hinders accurate detection.In this paper,we developed a dual-wavelength imaging system with phase-locked denoising technology to acquire vein image.The signals in the effective region are compared by using the absorption valley and peak of hemoglobin at 700nm and 940nm,respectively.The phase-locked denoising algorithm is applied to decrease the noise and interference of complex surroundings from the images.The imaging results of the vein are successfully extracted in complex noise environment.It is demonstrated that the denoising effect on hand veins imaging can be improved with 57.3%by using our dual-wavelength phase-locked denoising technology.Consequently,this work proposes a novel approach for venous imaging with dual-wavelengths and phase-locked denoising algorithm to extract venous imaging results in complex noisy environment better.

Reduced graphene oxide aerogel decorated with Mo_(2)C nanoparticles toward multifunctional properties of hydrophobicity,thermal insulation and microwave absorption

Reduced graphene oxide(rGO)aerogels are emerging as very attractive scaffolds for high-performance electromagnetic wave absorption materials(EWAMs)due to their intrinsic conductive networks and intricate interior microstructure,as well as good compatibility with other electromagnetic(EM)components.Herein,we realized the decoration of rGO aerogel with Mo_(2)C nanoparticles by sequential hydrothermal assembly,freeze-drying,and high-temperature pyrolysis.Results show that Mo_(2)C nanoparticle loading can be easily controlled by the ammonium molybdate to glucose molar ratio.The hydrophobicity and thermal insulation of the rGO aerogel are effectively improved upon the introduction of Mo_(2)C nanoparticles,and more importantly,these nanoparticles regulate the EM properties of the rGO aerogel to a large extent.Although more Mo_(2)C nanoparticles may decrease the overall attenuation ability of the rGO aerogel,they bring much better impedance matching.At a molar ratio of 1:1,a desirable balance between attenuation ability and impedance matching is observed.In this context,the Mo_(2)C/r GO aerogel displays strong reflection loss and broad response bandwidth,even with a small applied thickness(1.7 mm)and low filler loading(9.0wt%).The positive effects of Mo_(2)C nanoparticles on multifunctional properties may render Mo_(2)C/r GO aerogels promising candidates for high-performance EWAMs under harsh conditions.

Influence of Frohlich Interaction on Intersubband Transitions of InGaAs/InAlAs-Based Quantum Cascade Detector Structures Investigated by Infrared Modulated Photoluminescence

We demonstrate the use of an infrared modulated photoluminescence(PL)method based on a step-scan Fourier-transform infrared spectrometer to analyze intersubband transition(ISBT)of InGaAs/InAlAs quantum cascade detector(QCD)structures.By configuring oblique and parallel excitation geometries,high signal-to-noise ratio PL spectra in near-to-far-infrared region are measured.With support from numerical calculations based on the k·p perturbation theory,the spectra is attributed to intraband and interband transitions of InGaAs/InAlAs QCD structures.Temperature evolution results show that the k-dependent transitions caused by longitudinal optical phonon-assisted scattering(Frohlich interaction)plays an important role in the ISBT.These results suggest that this infrared modulated-PL method has great potential in characterizing QCD devices and conducting performance diagnostics.

Design of a coated thinly clad chalcogenide long-period fiber grating refractive index sensor based on dual-peak resonance near the phase matching turning point

A novel method for designing chalcogenide long-period fiber grating(LPFG) sensors based on the dual-peak resonance effect of the LPFG near the phase matching turning point(PMTP) is presented. Refractive index sensing in a high-refractive-index chalcogenide fiber is achieved with a coated thinly clad film. The dual-peak resonant characteristics near the PMTP and the refractive index sensing properties of the LPFG are analyzed first by the phase-matching condition of the LPFG. The effects of film parameters and cladding radius on the sensitivity of refractive index sensing are further discussed. The sensor is optimized by selecting the appropriate film parameters and cladding radius. Simulation results show that the ambient refractive index sensitivity of a dual-peak coated thinly clad chalcogenide LPFG at the PMTP can be 2400 nm/RIU, which is significantly higher than that of non-optimized gratings. It has great application potential in the field of chemical sensing and biosensors.

High efficiency of Brillouin scattering behavior in single-mode Ge–As–Se–Te fibers at 2μm

The Brillouin characteristics of step-index Ge–As–Se–Te(GAST)fibers at 2μm are designed and simulated on the basis of optical and acoustic properties.The refractive indexes of Ge_(20)As_(20)Se_(45)Te_(15)glass and Ge_(20)As_(20)Se_(43)Te_(17)glass serving as fiber core and cladding are 3.20 and 3.18 at 2μm,and their acoustic velocities are 2200 m/s and 2300 m/s,respectively.Numerical results indicate that the stimulated Brillouin scattering(SBS)efficiency is 248 m^(-1)·W^(-1),and the Brillouin threshold power is 66 m W when the core diameter of the 2-m-long GAST fiber is 4μm at 2-μm wavelength.The optic–acoustic coupling factor,the Brillouin frequency shift,and the Brillouin gain coefficient are 0.98,7.02 GHz,and 3.81×10^(-9)m/W,respectively.The SBS effect of GAST fibers simulated for the first time provides a new promising approach to selecting gain medium based on 2-μm-wavelength fiber laser.

Ferroelectricity of pristine Hf_(0.5)Zr_(0.5)O_(2) films fabricated by atomic layer deposition

Hafnium-based ferroelectric films,remaining their ferroelectricity down to nanoscale thickness,present a promising application for low-power logic devices and nonvolatile memories.It has been appealing for researchers to reduce the required temperature to obtain the ferroelectric phase in hafnium-based ferroelectric films for applications such as flexible and wearable electronics.This work demonstrates that a remanent polarization(P_(r))value of>5μC/cm^(2)can be obtained in asdeposited Hf_(0.5)Zr_(0.5)O_(2)(HZO)films that are fabricated by thermal atomic layer deposition(TALD)under low temperature of 250℃.The ferroelectric orthorhombic phase(o-phase)in the as-deposited HZO films is detected by scanning transmission electron microscopy(STEM).This low fabrication temperature further extends the compatibility of ferroelectric HZO films to flexible electronics and avoids the cost imposed by following high-temperature annealing treatments.

High efficiency of broadband transmissive metasurface terahertz polarization converter

Terahertz wave is between microwave and infrared bands in the electromagnetic spectrum with the frequency range from 0.1 THz to 10 THz. Controlling and processing of the polarization state in terahertz wave are the focus due to its great influence on the characteristics. In this paper, a transmissive metasurface terahertz polarization converter is designed in 3D structure with an upper surface of ruler-like rectangular, an intermediate dielectric layer and a lower surface of metal grid wires. Numerical simulations of the converter show that the polarization conversion ratio(PCR) is above 99.9% at 0.288 THz–1.6 THz, the polarization rotation angle(PRA) is close to 90° at 0.06 THz–1.4 THz, and the ellipticity angle(EA) is close to 0° at 0.531 THz–1.49 THz. The origin of the efficient polarization conversion is explained by analyzing the electric field intensity, magnetic field intensity, surface current, electric field energy density, and magnetic field energy density distributions of the converter at 1.19 THz and 0.87 THz, which are consistent with the energy transmittance and transmittance coefficient. In addition, the effects of different thickness and material of intermediate layer, thickness of upper surface material, polarized wave incidence angle, and metasurface materials on the performance of the polarization converter are discussed, and how they affect the conversion performance of the polarization converter are also explained.Our results provide a strong theoretical basis and technical support to develop high performance transmission-type terahertz polarization converters, and play an important role to promote the development of terahertz science and technology.

Probabilistic analysis of ultimate seismic bearing capacity of strip foundations

This paper presents a reliability analysis of the pseudo-static seismic bearing capacity of a strip foundation using the limit equilibrium theory. The first-order reliability method(FORM) is employed to calculate the reliability index. The response surface methodology(RSM) is used to assess the Hasofer e Lind reliability index and then it is optimized using a genetic algorithm(GA). The random variables used are the soil shear strength parameters and the seismic coefficients(khand kv). Two assumptions(normal and non-normal distribution) are used for the random variables. The assumption of uncorrelated variables was found to be conservative in comparison to that of negatively correlated soil shear strength parameters. The assumption of non-normal distribution for the random variables can induce a negative effect on the reliability index of the practical range of the seismic bearing capacity.

A novel spin-FET based on 2D antiferromagnet

Engineering the electronic band structure of material systems enables the unprecedented exploration of new physical properties that are absent in natural or as-synthetic materials.Electronic structures of bilayer two-dimensional(2D)systems can be flexibly engineered by the external electric field.For example.

A New Resonant Tunnelling Structure of Integrated InGaAs/GaAs Very-Long-Wavelength Quantum-Well Infrared Photodetector

We perform a theoretical study on a low dark current InGaAs/GaAs very-long-wavelength （〉 12 μm） quantum well infrared photodetector （VLW-QWIP）, based on a double barrier resonant tunnelling structure （DBRTS）. The ground tunnelling state of the central quantum well （QW） of the DBRTS can resonate with the first excited bound state of the doped InGaAs QW by adjusting the structure parameters of the DBRTS. Investigation of the carrier transport performance of this device is carried out based on quantum wave transport theory. It has been shown that the dark current in this device can be significantly reduced by two orders compared to conventional InGaAs/GaAs VLW-QWIPs, while the photocurrent is almost the same as those in conventional VLW-QWIPs. This DBRTS integrated VLW-QWIP structure may stimulate the experimental investigation for VLW-QWIPs at high operation temperatures.

Recent progress on integrating two-dimensional materials with ferroelectrics for memory devices and photodetectors

Two-dimensional （2D） materials, such as graphene and MoS2 related transition metal dichalcogenides （TMDC）, have attracted much attention for their potential applications. Ferroelectrics, one of the special and traditional dielectric materials, possess a spontaneous electric polarization that can be reversed by the application of an external electric field. In recent years, a new type of device, combining 2D materials with ferroelectrics, has been fabricated. Many novel devices have been fabricated, such as low power consumption memory devices, highly sensitive photo-transistors, etc. using this technique of hybrid systems incorporating ferroelectrics and 2D materials. This paper reviews two types of devices based on field effect transistor （FET） structures with ferroelectric gate dielectric construction （termed FeFET）. One type of device is for logic applications, such as a graphene and TMDC FeFET for fabricating memory units. Another device is for optoelectric applications, such as high performance phototransistors using a graphene p-n junction. Finally, we discuss the prospects for future applications of 2D material FeFET.

Short-wave infrared InGaAs photodetectors and focal plane arrays

In this article, unique spectral features of short-wave infrared band of 1 μm–3 μm, and various applications related to the photodetectors and focal plane arrays in this band, are introduced briefly. In addition, the different material systems for the devices in this band are outlined. Based on the background, the development of lattice-matched and wavelengthextended InGaAs photodetectors and focal plane arrays, including our continuous efforts in this field, are reviewed. These devices are concentrated on the applications in spectral sensing and imaging, exclusive of optical fiber communication.

Controlled Synthesis of Nanoscale CdTe Urchins

We presented a simple route to prepare nanoscale CdTe urchins in a tri-n-octylphosphine oxide（TOPO） system. CdTe urchins consisted of a core and several attached arms. The arms were ca. 3 nm wide, and their lengths could be controlled with the reaction time. The authors investigated the optical absorption and structural properties of the prepared CdTe. The lengths of the arms could be tuned into CdTe nanourchins, which led to a change in the photophysical properties of the nanoscale CdTe urchins. The results, including transmission electron microscopy（TEM） and absorption spectra, indicated that mesoporous silica and aminopropyltriethoxysilane（APTES） contributed to the formation of nanoscale CdTe urchins.

Progress in quantum well and quantum cascade infrared photodetectors in SITP

This paper presents a review of recent advances in quantum well and quantum cascade infrared photodetectors developed in Shanghai Institute of Technical Physics, Chinese Academy of Sciences(SITP/CAS). Firstly, the temperature-and bias-dependent photocurrent spectra of very long wavelength(VLW) GaAs/AlGaAs quantum well infrared photodetectors(QWIPs) are studied using spectroscopic measurements and corresponding theoretical calculations in detail. We confirm that the first excited state, which belongs to the quasi-bound state, can be converted into a quasi-continuum state induced by bias and temperature. Aided by band structure calculations, we propose a model of the double excited states that determine the working mechanism in VLW QWIPs. Secondly, we present an overview of a VLW QWIP focal plane array(FPA)with 320×256 pixels based on the bound to quasi-bound(BTQB) design. The technology of the manufacturing FPA based on the QWIP structures has been demonstrated. At the operating temperature of 45 K, the detectivity of QWIP FPA is larger than 1.4×10^(10) cm·Hz^(1/2)/W with a cutoff wavelength larger than 16 μm. Finally, to meet the needs of space applications, we proposed a new long wavelength quantum cascade detector with a broadband detection ranging from 7.6 μm to 10.4 μm. With a pair of identical coupled quantum wells separated by a thin barrier, acting as absorption regions, the relative linewidth(?E/E) of response can be dramatically broadened to 30.7%. It is shown that the spectral shape and linewidth can be tuned by the thickness of the thin barrier, while it is insensitive to the working temperature. The device can work above liquid nitrogen temperature with a peak responsivity of 63 mA/W and Johnson noise limited detectivity of 5.1×10~9 cm·Hz^(1/2)/W.

Synthesis and Characterization of Mesoporous Titania Particles and Thin Films

Well-organized mesoporous titania particles and thin films were successfully synthesized by using tetrabutyl titanate as the inorganic precursor and triblock copolymer （Pluronic P123） as the template via evaporationinduced self-assembly process. The resulting materials were characterized by high resolution transmission electron microscopy （HRTEM）, X-ray diffraction （XRD）. Fourier-transform infrared spectroscopy （FT-IR）,Brunauer-Emmett-Teller （BET） and atomic force microscopy （AFM）. Macro shape of mesoporous titania would greatly influence the mesostructure of materials, and the probable reasons were also discussed.

Structural and electrical properties of SrTiO3 thin films as insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures

SrTiOs （STO） thin films were deposited on p-Si（100） substrates at various substrate temperatures from 300℃ to 700℃ by radio frequency （RF） magnetron sputtering technique. Their structure and electrical properties were investigated. It was found that the transition from amorphous phase to polycrystalline phase occurred at the substrate temperatures 300-400℃. Their crystallinity became better when the substrate temperatures further increased. The dielectric and leakage current measurements were carried out by using the Si/STO/Pt metal-insulator-semiconductor （MIS） structures at room temperature. It was found that the fixed charge density decreased and both the interface trap density and the dielectric constant increased when the substrate temperatures were increased. The leakage current mechanisms for STO MIS structures with STO films prepared at 700℃ followed the space charge limited current （SCLC） under the low applied electric field and the Poole-Frenkel emission under the high one. In addition, the resistivity for films prepared at 700℃ was higher than 10^11Ω.cm under the voltage lower than 10V （corresponding to the electric field of 1.54×10^3kV.cm^-1）. It suggested that the STO films prepared at 700℃ were suitable for acting as the insulator of metal-ferroelectric-insulator-semiconductor （MFIS） structures.

A 10.7 μm InGaAs/InAlAs Quantum Cascade Detector

A 10.7μm quantum cascade detector based on lattice matched InGaAs/InAlAs/InP is demonstrated and characterized in terms of responsivity, resistivity and detectivity. The device operates in the 8 14μm atmospheric window up to 140 K and shows a peak reponsivity of 14.4mA/W at 78K. With a resistance-area product value of 159Ωcm^2, the Johnson noise limited detectivity D^＊J is 2.8 × 10^9 Jones （cmHz^1/2W^-1） at 78K.

A gate-free MoS2 phototransistor assisted by ferroelectrics

During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications.