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Oxygen-vacancy-related dielectric relaxation behaviours and impedance spectroscopy of Bi(Mg_(1/2)Ti_(1/2))O_(3) modified BaTiO_(3) ferroelectric ceramics 被引量:4
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作者 Ming-Ding Li Xin-Gui Tang +4 位作者 Si-Ming Zeng Yan-Ping Jiang Qiu-Xiang Liu Tian-Fu Zhang Wen-Hua Li 《Journal of Materiomics》 SCIE EI 2018年第3期194-201,共8页
Lead-free ferroelectric ceramics(1-x)BaTiO_(3-x)Bi(Mg_(1/2)Ti_(1/2))O_(3)(x=0.0-0.07)were synthesized by conventional solid state reaction method and the correlation of structure,dielectric,ferroelectric and impedance... Lead-free ferroelectric ceramics(1-x)BaTiO_(3-x)Bi(Mg_(1/2)Ti_(1/2))O_(3)(x=0.0-0.07)were synthesized by conventional solid state reaction method and the correlation of structure,dielectric,ferroelectric and impedance properties were investigated.It was found that T_(m) andε_(m) showed decreasing trend with the increase of BMT content.The high-temperature dielectric relaxation behaviour was observed in all the samples.The activation energy calculated from impedance(E_(a))and conductivity(E_(cond)),which revealed that the relaxation behaviours were linked with the migration of OVs.The values of E_(a)were almost equivalent to Econd.It was concluded that the short-range hopping of oxygen vacancy contributed to the dielectric relaxation and long-distance movement of doubly ionized oxygen vacancies contributed to the conduction.On the other hand,with increasing BMT contents,it was found that P-E loops became slimmer and slimmer,which indicated the increase of relaxor behaviour.The temperature dependence of P-E loops for 0.98BT-0.02BMT ceramic clearly showed the transition process from ferroelectric to relaxed ferroelectrics. 展开更多
关键词 BTeBMT ceramic Dielectric FERROELECTRIC Impedance Oxygen vacancies
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