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Epitaxial Growth of High Quality Diamond Film on the Cubic Boron Nitride Surface by Chemical Vapor Deposition
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作者 GAO Chun-xiao ZHANG Tie-chen +2 位作者 ZOU Guang-tian JIN Zeng-sun YANG Jie 《Chinese Physics Letters》 SCIE CAS CSCD 1996年第10期779-781,共3页
High quality diamond epitaxial film has been obtained on high pressure synthesized cubic boron nitride crystal surface by dc glow discharge chemical vapor deposition. The growth characteristics of the epitaxial film h... High quality diamond epitaxial film has been obtained on high pressure synthesized cubic boron nitride crystal surface by dc glow discharge chemical vapor deposition. The growth characteristics of the epitaxial film have been investigated by scanning electron microscope. The quality of the film has been confirmed by Raman spectroscope to be close to that of natural diamond. 展开更多
关键词 deposition. FILM BORON
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