In this study, we thoroughly examined the impact of heat treatments and hole count (p) on the properties of LnSrBaCu<sub>3</sub>O<sub>6+z</sub> (Ln = Eu, Sm, Nd) compounds. We focused on prepar...In this study, we thoroughly examined the impact of heat treatments and hole count (p) on the properties of LnSrBaCu<sub>3</sub>O<sub>6+z</sub> (Ln = Eu, Sm, Nd) compounds. We focused on preparation, X-ray diffraction with Rietveld refinement, AC susceptibility, DC resistivity measurements, and heat treatment effects. Two heat treatment types were applied: oxygen annealing [O] and argon annealing followed by oxygen annealing [AO]. As the rare earth Ln’s ionic radius increased, certain parameters notably changed. Specifically, c parameter, surface area S, and volume V increased, while critical temperature Tc and holes (p) in the CuO<sub>2</sub> plane decreased. The evolution of these parameters with rare earth Ln’s ionic radius in [AO] heat treatment is linear. Regardless of the treatment, the structure is orthorhombic for Ln = Eu, tetragonal for Ln = Nd, orthorhombic for Ln = Sm [AO], and pseudo-tetragonal for Sm [O]. The highest critical temperature is reached with Ln = Eu (Tc [AO] = 87.1 K). Notably, for each sample, Tc [AO] surpasses Tc [O]. Observed data stems from factors including rare earth ionic size, improved cationic and oxygen chain order, holes count p in Cu(2)O<sub>2</sub> planes, and in-phase purity of [AO] samples. Our research strives to clearly demonstrate that the density of holes (p) within the copper plane stands as a determinant impacting the structural, electrical, and superconducting properties of these samples. Meanwhile, the other aforementioned parameters contribute to shaping this density (p).展开更多
Amorphous hydrogenated silicon nitride thin films a-SiN<sub>x</sub>:H (abbreviated later by SiN<sub>x</sub>) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposi...Amorphous hydrogenated silicon nitride thin films a-SiN<sub>x</sub>:H (abbreviated later by SiN<sub>x</sub>) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). By changing ratio of gas flow (R = NH<sub>3</sub>/SiH<sub>4</sub>) in the reactor chamber different stoichiometric layers x = [N]/[Si] ([N] and [Si] atomic concentrations) are successfully deposited. Part of the obtained films has subsequently undergone rapid thermal annealing RTA (800°C/1 s) using halogen lamps. Optical and structural characterizations are then achieved by spectroscopic ellipsometry (SE), ion beam analysis and infrared absorption techniques. The SE measurements show that the tuning character of their refractive index n(λ) with stoichiometry x and their non-absorption properties in the range of 250 - 850 nm expect for Si-rich SiN<sub>x</sub> films in the ultraviolet UV range. The stoichiometry x and its depth profile are determined by Rutherford backscattering spectrometry (RBS) while the hydrogen profile (atomic concentration) is determined by Elastic Recoil Detection Analysis (ERDA). Vibrational characteristics of the Si-N, Si-H and N-H chemical bonds in the silicon nitride matrix are investigated by infrared absorption. An atomic hydrogen fraction ranging from 12% to 22% uniformly distributed as evaluated by ERDA is depending inversely on the stoichiometry x ranging from 0.34 to 1.46 as evaluated by RBS for the studied SiN<sub>x</sub> films. The hydrogen loss after RTA process and its out-diffusion depend strongly on the chemical structure of the films and less on the initial hydrogen concentration. A large hydrogen loss was noted for non-thermally stable Si-rich SiNx films. Rich nitrogen films are less sensitive to rapid thermal process.展开更多
Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characteri...Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.展开更多
文摘In this study, we thoroughly examined the impact of heat treatments and hole count (p) on the properties of LnSrBaCu<sub>3</sub>O<sub>6+z</sub> (Ln = Eu, Sm, Nd) compounds. We focused on preparation, X-ray diffraction with Rietveld refinement, AC susceptibility, DC resistivity measurements, and heat treatment effects. Two heat treatment types were applied: oxygen annealing [O] and argon annealing followed by oxygen annealing [AO]. As the rare earth Ln’s ionic radius increased, certain parameters notably changed. Specifically, c parameter, surface area S, and volume V increased, while critical temperature Tc and holes (p) in the CuO<sub>2</sub> plane decreased. The evolution of these parameters with rare earth Ln’s ionic radius in [AO] heat treatment is linear. Regardless of the treatment, the structure is orthorhombic for Ln = Eu, tetragonal for Ln = Nd, orthorhombic for Ln = Sm [AO], and pseudo-tetragonal for Sm [O]. The highest critical temperature is reached with Ln = Eu (Tc [AO] = 87.1 K). Notably, for each sample, Tc [AO] surpasses Tc [O]. Observed data stems from factors including rare earth ionic size, improved cationic and oxygen chain order, holes count p in Cu(2)O<sub>2</sub> planes, and in-phase purity of [AO] samples. Our research strives to clearly demonstrate that the density of holes (p) within the copper plane stands as a determinant impacting the structural, electrical, and superconducting properties of these samples. Meanwhile, the other aforementioned parameters contribute to shaping this density (p).
文摘Amorphous hydrogenated silicon nitride thin films a-SiN<sub>x</sub>:H (abbreviated later by SiN<sub>x</sub>) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). By changing ratio of gas flow (R = NH<sub>3</sub>/SiH<sub>4</sub>) in the reactor chamber different stoichiometric layers x = [N]/[Si] ([N] and [Si] atomic concentrations) are successfully deposited. Part of the obtained films has subsequently undergone rapid thermal annealing RTA (800°C/1 s) using halogen lamps. Optical and structural characterizations are then achieved by spectroscopic ellipsometry (SE), ion beam analysis and infrared absorption techniques. The SE measurements show that the tuning character of their refractive index n(λ) with stoichiometry x and their non-absorption properties in the range of 250 - 850 nm expect for Si-rich SiN<sub>x</sub> films in the ultraviolet UV range. The stoichiometry x and its depth profile are determined by Rutherford backscattering spectrometry (RBS) while the hydrogen profile (atomic concentration) is determined by Elastic Recoil Detection Analysis (ERDA). Vibrational characteristics of the Si-N, Si-H and N-H chemical bonds in the silicon nitride matrix are investigated by infrared absorption. An atomic hydrogen fraction ranging from 12% to 22% uniformly distributed as evaluated by ERDA is depending inversely on the stoichiometry x ranging from 0.34 to 1.46 as evaluated by RBS for the studied SiN<sub>x</sub> films. The hydrogen loss after RTA process and its out-diffusion depend strongly on the chemical structure of the films and less on the initial hydrogen concentration. A large hydrogen loss was noted for non-thermally stable Si-rich SiNx films. Rich nitrogen films are less sensitive to rapid thermal process.
基金supported by the Generalitat valenciana through grant PROMETEUS 2009/2011the European Commission through NanoCIS project (FP7-PEOPLE-2010IRSES ref. 269279)
文摘Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.
