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ENERGY DEPOSITION AND DISTRIBUTION WITHIN RESIST FILM IN ELECTRON BEAM LITHOGRAPHY
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作者 宋传杰 裘培勇 何延才 《Chinese Science Bulletin》 SCIE EI CAS 1986年第15期1023-1029,共7页
I.INTRODUCTION Electron beam lithography (EBL)is one of the most important methods to fabricate a submicron VLSI device. The ultimate resolution of EBL is limited by electron scattering in resist film and substrate (F... I.INTRODUCTION Electron beam lithography (EBL)is one of the most important methods to fabricate a submicron VLSI device. The ultimate resolution of EBL is limited by electron scattering in resist film and substrate (Fig. 1). E-beam irradiation 展开更多
关键词 lithography IRRADIATION Electron FABRICATE RESIST ULTIMATE DESIRED PROXIMITY BEAM verified
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