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S-band low noise amplifier using 1μm InGaAs/InAlAs/InP pHEMT
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作者 Z.Hamaizia N.Sengouga +1 位作者 M.C.E.Yagoub M.Missous 《Journal of Semiconductors》 EI CAS CSCD 2012年第2期58-63,共6页
This paper discusses the design of a wideband low noise amplifier(LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications.The LNA de... This paper discusses the design of a wideband low noise amplifier(LNA) in which specific architecture decisions were made in consideration of system-on-chip implementation for radio-astronomy applications.The LNA design is based on a novel ultra-low noise InGaAs/InAlAs/InP pHEMT.Linear and non-linear modelling of this pHEMT has been used to design an LNA operating from 2 to 4 GHz.A common-drain in cascade with a common source inductive degeneration,broadband LNA topology is proposed for wideband applications.The proposed configuration achieved a maximum gain of 27 dB and a noise figure of 0.3 dB with a good input and output return loss(S11〈—10 dB,S22〈—11 dB).This LNA exhibits an input 1-dB compression point of-18 dBm,a third order input intercept point of 0 dBm and consumes 85 mW of power from a 1.8 V supply. 展开更多
关键词 HEMT InGaAs INP SKADS telescope LNA
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