Investigation of resistive switching behaviours in WO_3-based RRAM devices

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

CMOS Compatible Nonvolatile Memory Devices Based on SiO_(2)/Cu/SiO_(2) Multilayer Films

We systematically investigate the resistive switching characteristics of SiO_(2) films with a Cu/SiO_(2)/Cu/SiO_(2)/Pt multilayer structure.The device exhibits good resistive switching performances,including a high ON/OFF resistance ratio(>103),good retention characteristic(>10^(4)s),satisfactory switching endurance(>200 cycles),a fast programming speed(<100 ns)and a high device yield(∼100%).Considering these results,SiO_(2)-based memories have highly promising applications for nonvolatile memory devices.

Effect of Pulse and dc Formation on the Performance of One-Transistor and One-Resistor Resistance Random Access Memory Devices

We investigate the effect of the formation process under pulse and dc modes on the performance of one transistor and one resistor （1 T1R） resistance random access memory （RRAM） device. All the devices are operated under the same test conditions, except for the initial formation process with different modes. Based on the statistical results, the high resistance state （FIRS） under the dc forming mode shows a lower value with better distribution compared with that under the pulse mode. One of the possible reasons for such a phenomenon originates from different properties of conductive filament （CF） formed in the resistive switching layer under two different modes. For the dc forming mode, the formed filament is thought to be continuous, which is hard to be ruptured, resulting in a lower HRS. However, in the case of pulse forming, the filament is discontinuous where the transport mechanism is governed by hopping. The low resistance state （LRS） can be easily changed by removing a few trapping states from the conducting path. Hence, a higher FIRS is thus observed. However, the HRS resistance is highly dependent on the length of the gap opened. A slight variation of the gap length will cause wide dispersion of resistance.

Improved charge trapping flash device with Al_2O_3 /HfSiO stack as blocking layer

In this paper, we investigate an Al2O3/HfSiO stack as the blocking layer of a metal-oxide-nitride-oxide-silicon- type （MONOS） memory capacitor. Compared with a memory capacitor with a single HfSiO layer as the blocking layer or an Al2O3/HfO2 stack as the blocking layer, the sample with the Al2O3/HfSiO stack as the blocking layer shows high program/erase （P/E） speed and good data retention characteristics. These improved performances can be explained by energy band engineering. The experimental results demonstrate that the memory device with an Al2O3/HfSiO stack as the blocking layer has great potential for further high-performance nonvolatile memory applications.

Resistive switching characteristics of Ti/ZrO_2/Pt RRAM device

In this paper, the bipolar resistive switching characteristic is reported in Ti/ZrO2/Pt resistive switching memory de- vices. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament composed of oxygen vacancies. The conduction mechanisms for low and high resistance states are dominated by the ohmic conduc- tion and the trap-controlled space charge limited current （SCLC） mechanism, respectively. The effect of a set compliance current on the switching parameters is also studied： the low resistance and reset current are linearly dependent on the set compliance current in the log-log scale coordinate; and the set and reset voltage increase slightly with the increase of the set compliance current. A series circuit model is proposed to explain the effect of the set compliance current on the resistive switching behaviors.

Analyzing trap generation in silicon-nanocrystal memory devices using capacitance and current measurement

The combination of capacitance-and current-voltage(CV/IV) measurements is used to analyze trap generation in silicon-nanocrystal memory devices during Fowler-Nordheim(FN) programming/erasing cycling.CV and IV curves are measured after certain P/E cycles.The flatband voltage(Vfb) and the threshold voltage(Vth) are extracted from CV curves by solving one-dimensional Schr?dinger and Poisson equations.Both hole and electron trappings are observed in the tunneling SiO2.They show up in the accumulation and the inversion,respectively.By fitting FN tunneling current,the area densities of cycling-induced electron traps in the blocking oxide and in the tunneling oxide are finally determined.

γ radiation caused graphene defects and increased carrier density

We report on a micro-Raman investigation of inducing defects in mono-layer, hi-layer and tri-layer graphene by γ ray radiation. It is found that the radiation exposure results in two-dimensional （2D） and G band position evolution with the layer number increasing and D and D~ bands rising, suggesting the presence of defects and related crystal lattice deformation in graphene. Bi-layer graphene is more stable than mono- and tri-layer graphene, indicating that the former is a better candidate in the application of radiation environments. Also, the DC electrical property of the mono-layer graphene device shows that the defects increase the carrier density.

Phase zone photon sieve

A novel diffractive optical element, named phase zone photon sieve （PZPS）, is presented. There are three kinds of phase plates in PZPSs： PZPS1, PZPS2, and PZPS3. Each of the PZPSs has its own structure and is made on quartz substrate by etching. The three PZPSs have stronger diffraction peak intensity than a photon sieve （PS） when the margin pinhole and zone line width are kept the same. The PZPS3 can produce a smaller central diffractive spot than the ordinary PS with the same number of zones on the Fresnel zone plate. We have given the design method for and the simulation of PZPS and PS. PZPS has potential applications in optical maskless lithography.

Radially and Azimuthally Polarized Beams Generated by a Composite Spiral Zone Plate

We present a diffractive method for obtaining azimuthal and radially polarized beams.This method involves a modified half-wave plate,a composite spiral zone plate,a pinhole and a lens.Two composite spiral zone plates are combined and assisted by a pinhole and a lens,to transform a circularly polarized beam into a radially polarized or an azimuthal polarized beam.This method is investigated numerically using diffraction theory.The field distributions on the focal spot of the composite spiral zone plates and the output cylindrical beams are calculated.Finally,the use of this method to generate cylindrical vector beams is validated.

Design, Fabrication and Test of a Soft X-Ray Even-Order Transmission Grating

在有他们的第一份订单和分散的 X 光区域工作的大多数传播栅栏被与当前的制造技术可完成的线密度限制。我们在场一个二维的 X 光传播栅栏的一个新奇图案。有用它的第二份订单的更高的分散的栅栏工作，和从第一和第三份订单的影响能被压制。一个栅栏根据新奇设计被制作，它的衍射表演与一样的线密度与一个传统的 X 光传播栅栏比较被测试。当当高密度的栅栏的制造变得更困难时，高分散被需要时，新奇栅栏能是特别有用的。

Characterization of focusing performance of spiral zone plates with fractal structure

We propose an efficient method of generating a vortex beam with multi-foci by using a fractal spiral zone plate(FSZP), which is designed by combining fractal structure with a spiral zone plate(SZP) in the squared radial coordinate.The theoretical analysis reveals that the number of foci that embed vortices is significantly increased as compared with that obtained by using a conventional SZP. Furthermore, the influence of topological charge on the intensity distribution in focal plane is also discussed in detail. For experimental investigation, an FSZP with topological charge p = 1 and 6.4 mm diameter is fabricated by using a photo-etching technique. The calibration indicates that the focusing performances of such a kind of zone plane(ZP) accord well with simulations, thereby providing its potential applications in multi-dimensional optical manipulation and optical imaging technology.

Size dependence of biexciton binding energy in single InAs/GaAs quantum dots

This paper studies the size dependence of biexciton binding energy in single quantum dots （QDs） by using atomic force microscopy and micro-photoluminescence measurements. It finds that the biexciton binding energies in the QDs show ＂binding＂ and ＂antibinding＂ properties which correspond to the large and small sizes of QDs, respectively. The experimental results can be well interpreted by the biexciton potential curve, calculated from the exciton molecular model and the Heitler London method.

A novel 2-T structure memory device using a Si nanodot for embedded application

Performance and reliability ofa 2 transistor Si nanocrystal nonvolatile memory （NVM） are investigated. A good performance of the memory cell has been achieved, including a fast program/erase （P/E） speed under low voltages, an excellent data retention （maintaining for 10 years） and good endurance with a less threshold voltage shift of less than 10% after 104 P/E cycles. The data show that the device has strong potential for future embedded NVM applications.

Top contact organic field effect transistors fabricated using a photolithographic process

This paper proposes an effective method of fabricating top contact organic field effect transistors by using a pho- tolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated suc- cessfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process.

Analysis of tail bits generation of multilevel storage in resistive switching memory

The tail bits of intermediate resistance states（IRSs） achieved in the SET process（IRSS） and the RESET process（IRSR） of conductive-bridge random-access memory were investigated. Two types of tail bits were observed, depending on the filament morphology after the SET/RESET operation.（i） Tail bits resulting from lateral diffusion of Cu ions introduced an abrupt increase of device resistance from IRS to ultrahigh-resistance state, which mainly happened in IRSS.（ii） Tail bits induced by the vertical diffusion of Cu ions showed a gradual shift of resistance toward lower value. Statistical results show that more than 95% of tail bits are generated in IRSS. To achieve a reliable IRS for multilevel cell（MLC） operation, it is desirable to program the IRS in RESET operation. The mechanism of tail bit generation that is disclosed here provides a clear guideline for the data retention optimization of MLC resistive random-access memory cells.

Ordered InAs Quantum Dots with Controllable Periods Grown on Stripe-Patterned GaAs Substrates

GaAs （001） substrates are patterned by electron beam lithography and wet chemical etching to control the nucleation of lnAs quantum dots （QDs）. InAs dots are grown on the stripe-patterned substrates by solid source molecular beam epitaxy. A thick buffer layer is deposited on the strip pattern before the deposition of InAs. To enhance the surface diffusion length of the In atoms, InAs is deposited with low growth rate and low As pressure. The AFM images show that distinct one-dimensionally ordered InAs QDs with homogeneous size distribution are created, and the QDs preferentiMly nucleate along the trench. With the increasing amount of deposited InAs and the spacing of the trenches, a number of QDs are formed beside the trenches. The distribution of additional QDs is long-range ordered, always along the trenchs rather than across the spacing regions.

Fabrication of ll-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

Fine silica-like fines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist （HSQ）. By precisely controlling the mask-wafer gap at 10μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

Problems on fabrication of computer-generated holograms for testing aspheric surfaces

Interferometric optical testing using computer-generated hologram （CGH） can give highly accurate measurement of aspheric surfaces has been proved. After the system is designed, a phase function is obtained according to the CGH＇s surface plane. For the requirement of accuracy, an optimization algorithm that transfers the phase function into a certain mask pattern file is presented in this letter, based on the relationship between the pattern error of CGH and the output wavefront accuracy. Then the writing machine is able to fabricate such a mask with this kind of file. With that mask, an improved procedure on fabrication of phase type CGH is also presented. Interferometrie test results of an aspherie surface show that the whole test system obtains the demanded accuracy.

Effects of interaction between defects on the uniformity of doping HfO_2-based RRAM:a first principle study

The physical mechanism of doping effects on switching uniformity and operation voltage in Al-doped HfO_2 resistive random access memory(RRAM) devices is proposed from another perspective:defects interactions, based on first principle calculations.In doped HfO_2,dopant is proved to have a localized effect on the formation of defects and the interactions between them.In addition,both effects cause oxygen vacancies(V_O) to have a tendency to form clusters and these clusters are easy to form around the dopant.It is proved that this process can improve the performance of material through projected density of states(PDOS) analysis.For V_O filament-type RRAM devices, these clusters are concluded to be helpful for the controllability of the switching process in which oxygen vacancy filaments form and break.Therefore,improved uniformity and operation voltage of Al-doped HfjO_2 RRAM devices is achieved.

Design and fabrication of computer-generated holograms for testing optical freeform surfaces

Freeform optical surfaces （FOSs） will be the best elements in the design of compact optical systems in the future. However, it is extremely difficult to measure freeform surface with sufficient accuracy, which im- pedes the development of the freeform surface. The design and fabrication of computer-generated hologram （CGH） , which has been successfully applied to the tests for aspheric surfaces, cannot be directly adopted to test FOSs due to their non-rotational asymmetry. A novel ray tracing planning method combined with successively optimizing even and odd power coefficients of phase polynomials in turn is proposed, which can successfully design a non-rotational asymmetry CGH for the tests of FOSs with an F-O lens. A new eight-step fabrication process is also presented aiming to solve the problem that the linewidth on the same circle of the CGH for testing freeform surface is not uniform. This problem cannot be solved in the original procedure of CGH fabrication. The test results of the step profiler show that the CGH fabricated in the new nrocedure meets the reauirements.