期刊文献+
共找到2篇文章
< 1 >
每页显示 20 50 100
Preparation of GaN-on-Si based thin-film flip-chip LEDs
1
作者 章少华 封波 +1 位作者 孙钱 赵汉民 《Journal of Semiconductors》 EI CAS CSCD 2013年第5期35-37,共3页
GaN based MQW epitaxial layers were grown on Si (111) substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and... GaN based MQW epitaxial layers were grown on Si (111) substrate by MOCVD using AIN as the buffer layer. High light extraction LEDs were prepared by substrate transferring technology in combination with thin-film and flip-chip design. The blue and white 1.1 × 1.1 mm2 LED lamps are measured. The optical powers and external quantum efficiency for silicone encapsulated blue lamp are 546 mW, and 50.3% at forward current of 350 mA, while the photometric light output for a white lamp packaged with standard YAG phosphor is 120.1 lm. 展开更多
关键词 silicon substrate GAN flip chip LED
原文传递
Light output improvement of GaN-based light-emitting diodes grown on Si (111) by a via-thin-film structure
2
作者 Zengcheng LI Bo Feng +9 位作者 Biao Deng Legong Liu Yingnan Huang Meixin Feng Yu Zhou Hanmin Zhao Qian Sun Huaibing Wang Xiaoli Yang Hui Yang 《Journal of Semiconductors》 EI CAS CSCD 2018年第4期39-43,共5页
This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LE... This work reports the fabrication of via-thin-film light-emitting diode (via-TF-LED) to improve the light output power (LOP) of blue/white GaN-based LEDs grown on Si (111) substrates. The as-fabricated via-TF-LEDs were featured with a roughened n-GaN surface and the p-GaN surface bonded to a wafer carrier with a silver-based reflective electrode, together with an array of embedded n-type via pillar metal contact from the p-GaN surface etched through the multiple-quantum-wells (MQWs) into the n-GaN layer. When operated at 350 mA, the via-TF- LED gave an enhanced blue LOP by 7.8% and over 3.5 times as compared to the vertical thin-film LED (TF-LED) and the conventional lateral structure LED (LS-LED). After covering with yellow phosphor that converts some blue photons into yellow light, the via-TF-LED emitted an enhanced white luminous flux by 13.5% and over 5 times, as compared with the white TF-LED and the white LS-LED, respectively. The significant LOP improve- ment of the via-TF-LED was attributed to the elimination of light absorption by the Si (111) epitaxial substrate and the finger-like n-electrodes on the roughened emitting surface. 展开更多
关键词 via thin film LED structure GaN-on-Si light-emitting diode light extraction
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部