Miscibility of Binary Bose-Einstein Condensate Mixture with Competing s- and p-Wave Interaction

Combining two Bose-Einstein condensates(BECs)may result in a miscible or immiscible mixture.In this study,we investigate the miscibility-immiscibility transition of binary BEC mixture trapped in an isotropic harmonic potential,with both inter-species s-wave and p-wave scattering interaction included.The mean-field Gross-Pitaevskii equations with p-wave interaction term are numerically solved to obtain the ground-state phase diagram.Due to the pwave interaction competing with isotropic s-wave interaction,the spatial density profile of binary BEC mixtures transforming from immiscible phase to miscible phase is observed.The p-wave interaction caused miscibility can be observed in current experiments of Bose-Bose mixture tuned near a p-wave Feshbach resonance.

Sodium Diffuses from Glass Substrates through P1 Lines and Passivates Defects in Perovskite Solar Modules

Most thin-film photovoltaic modules are constructed on soda-lime glass(SLG)substrates containing alkali oxides,such as Na_(2)O.Na may diffuse from SLG into a module's active layers through P1 lines,an area between a module's constituent cells where the substrate-side charge transport layer(CTL)is in direct contact with SLG.Na diffusion from SLG is known to cause several important effects inⅡ-Ⅵand chalcogenide solar modules,but it has not been studied in perovskite solar modules(PSMs).In this work,we use complementary microscopy and spectroscopy techniques to show that Na diffusion occurs in the fabrication process of PSMs.Na diffuses vertically inside P1 lines and then laterally from P1 lines into the active area for up to 360 pm.We propose that this process is driven by the high temperatures the devices are exposed to during CTL and perovskite annealing.The diffused Na preferentially binds with Br,forming Br-poor,l-rich perovskite and a species rich in Na and Br(Na-Br)close to P1 lines.Na-Br passivates defect sites,reducing non-radiative recombination in the perovskite and boosting its luminescence by up to 5×.Na-Br is observed to be stable after 12 weeks of device storage,suggesting long-lasting effects of Na diffusion.Our results not only point to a potential avenue to increase PSM performance but also highlight the possibility of unabated Na diffusion throughout a module's lifetime,especially if accelerated by the electric field and elevated temperatures achievable during device operation.

Seeing at a distance with multicore fibers

Images and videos provide a wealth of information for people in production and life.Although most digital information is transmitted via optical fiber,the image acquisition and transmission processes still rely heavily on electronic circuits.The development of all-optical transmission networks and optical computing frameworks has pointed to the direction for the next generation of data transmission and information processing.Here,we propose a high-speed,low-cost,multiplexed parallel and one-piece all-fiber architecture for image acquisition,encoding,and transmission,called the Multicore Fiber Acquisition and Transmission Image System(MFAT).Based on different spatial and modal channels of the multicore fiber,fiber-coupled self-encoding,and digital aperture decoding technology,scenes can be observed directly from up to 1 km away.The expansion of capacity provides the possibility of parallel coded transmission of multimodal high-quality data.MFAT requires no additional signal transmitting and receiving equipment.The all-fiber processing saves the time traditionally spent on signal conversion and image pre-processing(compression,encoding,and modulation).Additionally,it provides an effective solution for 2D information acquisition and transmission tasks in extreme environments such as high temperatures and electromagnetic interference.

Recent advances in single-atom catalysts(SACs)for photocatalytic applications

Artificial photocatalysis represents a hopeful avenue for tackling the global crisis of environmental and energy sustainability.The crux of industrial application in photocatalysis lies in efficient photocatalysts that can inhibit the recombination of photogenerated charge carriers,thereby boost the efficiency of chemical reactions.In the past decade,single-atom catalysts(SACs)have been growing extremely rapidly and have become the forefront of photocatalysis owing to their superior utilization of metal atoms and outstanding catalytic activity.In this work,we provide an overview of the latest advancements and challenges in SACs for photocatalysis,focusing on the photocatalytic mechanisms,encompassing the generation,separation,migration,and surface extraction of photogenerated carriers.We also explore the design,synthesis,and characterization of SACs and introduce the progress of SACs for photocatalytic applications,such as water splitting and CO_(2)reduction.Lastly,we offer our personal perspectives on the opportunities and challenges of SACs in photocatalysis,aiming to provide insights into the future studies of SACs for photocatalytic applications.

A refined Monte Carlo code for low-energy electron emission from gold material irradiated with sub-keV electrons

Considering the significance of low-energy electrons(LEEs;0–20 eV) in radiobiology, the sensitization potential of gold nanoparticles(AuNPs) as high-flux LEE emitters when irradiated with sub-keV electrons has been suggested. In this study, a track-structure Monte Carlo simulation code using the dielectric theory was developed to simulate the transport of electrons below 50 keV in gold. In this code, modifications, particularly for elastic scattering, are implemented for a more precise description of the LEE emission in secondary electron emission. This code was validated using the secondary electron yield and backscattering coefficient. To ensure dosimetry accuracy, we further verified the code for energy deposition calculations using the Monte Carlo toolkit, Geant4. The development of this code provides a basis for future studies regarding the role of AuNPs in targeted radionuclide radiotherapy.

Large magnetostriction of Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)/epoxy composites in a wide temperature range

We report the magnetostrictive performance of the Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)/epoxy composites.Measurement of M?ssbauer spectra and the XRD results indicate that the easy magnetic direction of the Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)compound is along<111>direction with spontaneous magnetostrictionλ111 of1900 ppm.The<111>-oriented Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)/epoxy composites with particle volume fractions of20 vol%-55 vol%were prepared.Magnetization measurements demonstrate that the composite is highly anisotropic.The raw material cost of Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)is about 85%of that of the Terfenol-D(Tb_(0.3)Dy_(0.7)Fe_(2))composition.Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)/epoxy composites possess comparable magnetostriction with those composites made of Tb_(0.3)Dy_(0.7)Fe_(2)particles.At room temperature,the magnetostrictionλ_Ⅱof the Nd_(0.2)Tb_(0.3)Dy_(0.5)Fe_(1.93)/epoxy composite reaches 420 ppm at a low field of 80 kA/m and about1000 ppm at 239 kA/m.In addition,the composite exhibits a large saturation magnetostrictionλ_Ⅱover1200 ppm from 300 to 100 K,suggesting its potential applications as a low-cost magnetostrictive material in a wide temperature range.Therefore,the current study offers an opportunity to widen the operating temperature range of the magnetostrictive composite.

Surface plasmon decorated InGaO deep-UV photodetector array for image sensing and water quality monitoring via highly effective hot electron excitation and interfacial injection

In addition to the plasmon-mediated resonant coupling mechanism,the excitation of hot electron induced by plasmon presents a promising path for developing high-performance optoelectronic devices tailored for various applications.This study introduces a sophisticated design for a solar-blind ultraviolet(UV)detector array using linear In-doped Ga_(2)O_(3) (InGaO)modulated by platinum(Pt)nanoparticles(PtNPs).The construction of this array involves depositing a thin film of Ga_(2)O_(3) through the plasmonenhanced chemical vapor deposition(PECVD)technique.Subsequently,PtNPs were synthesized via radio-frequency magnetron sputtering and annealing process.The performance of these highly uniform arrays is significantly enhanced owing to the generation of high-energy hot electrons.This process is facilitated by non-radiative decay processes induced by PtNPs.Notably,the array achieves maximum responsivity(R)of 353 mA/W,external quantum efficiency(EQE)of 173%,detectivity(D*)of approximately 10~(13)Jones,and photoconductive gain of 1.58.In addition,the standard deviation for photocurrent stays below17%for more than 80%of the array units within the array.Subsequently,the application of this array extends to photon detection in the deep-UV(DUV)range.This includes critical areas such as imaging sensing and water quality monitoring.By leveraging surface plasmon coupling,the array achieves high-performance DUV photon detection.This approach enables a broad spectrum of practical applications,underscoring the significant potential of this technology for the advancement of DUV detectors.

Theoretical study on magnetocaloric effect and its electric-field regulation in CrI_(3)/metal heterostructure

The extraordinary properties of a heterostructure by stacking atom-thick van der Waals(vdW)magnets have been extensively studied.However,the magnetocaloric effect(MCE)of heterostructures that are based on monolayer magnets remains to be explored.Herein,we deliberate MCE of vd W heterostructure composed of a monolayer CrI_(3)and metal atomic layers(Ag,Hf,Au,and Pb).It is revealed that heterostructure engineering by introducing metal substrate can improve MCE of CrI_(3),particularly boosting relative cooling power to 471.72μJ m^(-2)and adiabatic temperature change to 2.1 K at 5 T for CrI_(3)/Hf.This improved MCE is ascribed to the enhancement of magnetic moment and intralayer exchange coupling in CrI_(3)due to the CrI_(3)/metal heterointerface induced charge transfer.Electric field is further found to tune MCE of CrI_(3)in heterostructures and could shift the peak temperature by around 10 K in CrI_(3)/Hf,thus manipulating the working temperature window of MCE.These theoretical results could enrich the research on low-dimensional magnetocaloric materials.

High-performance,low-power,and flexible ultraviolet photodetector based on crossed ZnO microwires p-n homojunction

Low-power, flexible, and integrated photodetectors have attracted increasing attention due to their potential applications of photosensing, astronomy, communications, wearable electronics, etc. Herein, the samples of ZnO microwires having p-type(Sb-doped ZnO, ZnO:Sb) and n-type(Ga-doped ZnO, ZnO:Ga) conduction properties were synthesized individually. Sequentially, a p-n homojunction vertical structure photodiode involving a single ZnO:Sb microwire crossed with a ZnO:Ga microwire, which can detect ultraviolet light signals, was constructed.

High responsivity and fast response 8×8β-Ga_(2)O_(3)solar-blind ultraviolet imaging photodetector array

In this work,an 8×8 Ga_(2)O_(3)solar-blind ultraviolet photodetector array is introduced for image sensing application.The 2-in wafer-scaled Ga_(2)O_(3)thin film was grown by metalorganic chemical vapor deposition technique;and the photodetector array was fabricated through ultraviolet photolithography,lift-off,and electron-beam evaporation.In addition to the high solar-blind/visible rejection ratio of 104,every photodetector cell in the array has high performance and fast response speed,such as responsivity of 49.4 A W^(-1),specific detectivity of 6.8×10^(14)Jones,external quantum efficiency of 1.9×10^(4)%,linear dynamic range of 117.8 d B,and response time of 41 ms,respectively,indicating the high photo-response performance of the photodetector.Moreover,the photodetector array displayed uniform responsivity with a standard deviation of~6%,and presented a sensing image of low chromatic aberration,owing to the high resolution of the photodetector array.In a word,this work may contribute to developing Ga_(2)O_(3)-based optoelectronic device applications.

界面工程与等离激元效应协同作用增强的ZnO微米线同质结自驱动紫外探测器

高灵敏度的自驱动紫外探测器在许多应用中都大有可为.本研究提出了一种一维ZnO基同结光电探测器,它包括表面覆盖着Ag纳米线的锑掺杂ZnO微米线(AgNWs@ZnO:Sb MW)、MgO缓冲纳米层和ZnO薄膜.该探测器在0 V偏压下对紫外光非常敏感,其性能参数包括约7个量级的开关比、292.2 mA W^(-1)的响应度、6.9×10^(13)Jones的比探测率,以及微秒量级的快速响应速度(上升时间16.4μs,下降时间465.1μs).特别是10μW cm^(-2)的微弱紫外光时接近99.3%的外量子效率.此外,本文系统研究了MgO纳米薄膜和表面修饰AgNWs对探测器件性能增强的机理.作为自驱动光接收器,该光电二极管被进一步集成到能够实时传输信息的紫外通信系统中.此外,基于AgNWs@p-ZnO:Sb MW/i-MgO/n-ZnO的同质结9×9阵列显示出均匀的光响应分布,可用作具有良好空间分辨率的成像传感器.这项研究有望为设计高性能紫外光检测器提供一条具有低功耗和可大规模建造的途径.

High-performance self-powered ultraviolet photodetector in SnO_(2)microwire/p-GaN heterojunction using graphene as charge collection medium

Graphene monolayer has been extensively applied as a transparency electrode material in photoelectronic devices due to its high transmittance,high carrier mobility,and ultrafast carrier dynamics.In this study,a high-performance self-powered photodetector,which is made of a SnO_(2)microwire,p-type GaN film,and monolayer graphene transparent electrode,was proposed and fabricated.The detector is sensitive to ultraviolet light signals and illustrates pronounced detection performances,including a peak respon-sivity∼223.7 mA W^(-1),a detectivity∼6.9×10^(12)Jones,fast response speed(rising/decaying times∼18/580μs),and excellent external quantum efficiency∼77%at 360 nm light illumination without exter-nal power supply.Compared with the pristine SnO_(2)/GaN photodetector using ITO electrode,the device performances of responsivity and detectivity are significantly increased over 6×10^(3)%and 3×10^(3)%,respectively.The performance-enhanced characteristics are mainly attributed to the high-quality het-erointerface of n-SnO_(2)/p-GaN,the highly conductive capacity,and the unique transparency of graphene electrodes.Particularly,the built-in potential formed at the SnO_(2)/GaN heterojunction interface could be strengthened by the Schottky potential barrier derived from the graphene electrode and SnO_(2)wire,en-hancing the carrier collection efficiency through graphene as a charge collection medium.This work is of great importance and significance to developing excellent-performance ultraviolet photodetectors for photovoltaic and optoelectronic applications in a self-powered operation manner.

High-mobility induced high-performance self-powered ultraviolet photodetector based on single ZnO microwire/PEDOT:PSS heterojunction via slight ga-doping

Semiconductor micro/nanostructures with broad bandgap can provide powerful candidates for fabricating ultraviolet photodetectors(PDs)due to their proper bandgap,unique optoelectronic properties,large surface-to-volume ratio and good integration.However,semiconducting micro/nanostructures suffer from low electron conductivity and abundant surface defects,which greatly limits their practical application in developing PDs.In this work,an ultraviolet PD consisting of single Ga-doped ZnO microwire(ZnO:Ga MW)and p-type poly(3,4 ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)was designed.When exposed to ultraviolet illumination,the PD exhibits excellent performance(responsivity~185 m A/W,detectivity~2.4×10^(11) Jones,and fast response speed of~212μs for rise time and~387μs for decay time)under self-driven conditions.Compared with that of an undoped Zn O MWbased PD,the responsivity and detectivity of ZnO:Ga MW/PEDOT:PSS PD are significantly enhanced over 400%and 600%,respectively.Due to the incorporation of Ga element,the charge transport properties of a ZnO:Ga MW,specifically for the mobility,are effectively enhanced,which can substantially facilitate the generation,separation,transport and harvest efficiency of photo-generated carriers in the asfabricated PD.Besides,the Ga-incorporation improves the crystalline quality of MWs and reduces surface state density,further suggesting a high-quality ZnO:Ga MW/PEDOT:PSS heterojunction.This work provides a potential approach for designing high-performance self-powered ultraviolet PDs from the aspect of enhancing carrier transport through fine doping.

Bifunctional ultraviolet light-emitting/detecting device based on a SnO_(2) microwire/p-GaN heterojunction

SnO_(2)has attracted considerable attention due to its wide bandgap,large exciton binding energy,and outstanding electrical and optoelectronic features.Owing to the lack of reliable and reproducible p-type SnO_(2),many challenges on developing SnO_(2)-based optoelectronic devices and their practical applications still remain.Herein,single-crystal SnO_(2)microwires(MWs)are acquired via the self-catalyzed approach.As a strategic alternative,n-SnO_(2)MW/p-GaN heterojunction was constructed,which exhibited selectable dual-functionalities of light-emitting and photodetection when operated by applying an appropriate voltage.The device illustrated a distinct near-ultraviolet light-emission peaking at∼395.0 nm and a linewidth∼50 nm.Significantly,the device characteristics,in terms of the main peak positions and linewidth,are nearly invariant as functions of various injection current,suggesting that quantum-confined Stark effect is essentially absent.Meanwhile,the identical n-SnO_(2)MW/p-GaN heterojunction can also achieve photovoltaic-type light detection.The device can steadily feature ultraviolet photodetecting ability,including the ultraviolet/visible rejection ratio(R_(360 nm)/R_(400 nm))∼1.5×10^(3),high photodark current ratio of 105,fast response speed of 9.2/51 ms,maximum responsivity of 1.5 A/W,and detectivity of 1.3×10^(13)Jones under 360 nm light at−3 V bias.Therefore,the bifunctional device not only displays distinct near-ultraviolet light emission,but also has the ability of high-sensitive ultraviolet photodetection.The novel design of n-SnO_(2)MW/p-GaN heterojunction bifunctional systems is expected to open doors to practical application of SnO_(2)microstructures/nanostructures for large-scale device miniaturization,integration and multifunction in next-generation high-performance photoelectronic devices.

Electrically driven single microwire-based single-mode microlaser

Engineering the lasing-mode oscillations effectively within a laser cavity is a relatively updated attentive study and perplexing issue in the field of laser physics and applications. Herein, we report a realization of electrically driven single-mode microlaser, which is composed of gallium incorporated zinc oxide microwire (ZnO:Ga MW) with platinum nanoparticles (PtNPs, d ~ 130 nm) covering, a magnesium oxide (MgO) nanofilm, a Pt nanofilm, and a p-type GaN substrate. The laser cavity modes could resonate following the whispering-gallery mode (WGM) among the six side surfaces by total internal reflection, and the single-mode lasing wavelength is centered at 390.5 nm with a linewidth of about 0.18 nm. The cavity quality factor Q is evaluated to about 2169. In the laser structure, the usage of Pt and MgO buffer layers can be utilized to engineer the band alignment of ZnO:Ga/GaN heterojunction, optimize the p-n junction quality and increase the current injection. Thus, the well-designed device structure can seamlessly unite the electron-hole recombination region, the gain medium, and optical microresonator into the PtNPs@ZnO:Ga wire perfectly. Such a single MW microlaser is essentially single-mode regardless of the gain spectral bandwidth. To study the single-mode operation, PtNPs working as superabsorber can engineering the multimode lasing actions of ZnO:Ga MWs even if their dimensions are typically much larger than that of lasing wavelength. Our findings can provide a straightforward and effective scheme to develop single-mode microlaser devices based on one-dimensional wire semiconductors.