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Optical detection of quantum geometric tensor in intrinsic semiconductors
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作者 Zhi Li Shengli Zhang +5 位作者 Takami Tohyama Xiufeng Song Yu Gu Toshiaki Iitaka Haibin Su Haibo Zeng 《Science China(Physics,Mechanics & Astronomy)》 SCIE EI CAS CSCD 2021年第10期82-87,共6页
Quantum geometric tensor, including a symmetric real part defined as quantum metric and an antisymmetric part defined as Berry curvature, is essential for understanding many phenomena. In this study, we investigated t... Quantum geometric tensor, including a symmetric real part defined as quantum metric and an antisymmetric part defined as Berry curvature, is essential for understanding many phenomena. In this study, we investigated the photogalvanic efect of semiconductors with time-reversal-invariant and spatial inversion symmetries using the quantum kinetic equation. We concluded that the integral of the symmetric(antisymmetric) part of quantum geometric tensor on the equal energy surface in momentum space, satisfying the resonance condition, is related to the generation rate of carriers in semiconductors under linearly(circularly) polarized light. Under additional bias voltage, the dc photocurrent is proportional to the bias voltage. Our study provided an alternative interpretation for the photogalvanic efect in the view of quantum geometric tensor. Additionally, it classified the intrinsic diference between linearly and circularly polarized optical fields. 展开更多
关键词 quantum geometry photovoltaic efect nonlinear optics
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