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A Study of Microstructures in Helium-implanted 4H-SiC by RBS-channeling and TEM
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作者 ZhangChonghong SunYoumei +5 位作者 SongYing DuanJinglai T.Shibayama K.Sakaguchi H.Takahashi ShenDingyu 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2002年第1期61-62,共2页
Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of... Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e. 展开更多
关键词 氦离子注入 碳化硅晶体 显微结构 RBS沟道 透射电镜研究 TEM 串联加速器
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