This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment researc...This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done.Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction.This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided.The result shows that the technique can be not only compatible with IC technology but also integrated easily,and has a wide application field.展开更多
This paper reports on the fabrication and sensing characteristics of Polyimide-based humidity sensor,based on that,a new integrated circuit of humidity measurement has been designed.It is a novel capacitive-type syste...This paper reports on the fabrication and sensing characteristics of Polyimide-based humidity sensor,based on that,a new integrated circuit of humidity measurement has been designed.It is a novel capacitive-type systems on a chip structure using the MEMS process.The results show that the new sensor presents sensing characteristics over a humidity range from 10%～70% RH at 20℃,and the sensor is able to fabricated together with ICs technology.The result shows that integration of humidity sensor with integrated circuit of humidity measurement is considerably easier when they are built in sensing groove.The appeal of a new structure like this brings the possibility of applications that would require the flexibility of simple screen printing.展开更多
In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand tempera...In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.展开更多
A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The exp...A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor （MAGFET） with an L ： W ratio of 2 ： 1 is 21.26 mV/T, and that with an L ： W ratio of 4 ： 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L ： W ratio of 4 ： 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.展开更多
文摘This paper mainly describes a research of fabrication-technology of silicon magnetic-sensitive transistor (SMST) with rectangle-plank-cubic structure fabricated on silicon wafer by MEMS technique.An experiment research on basic characteristic of the silicon magnetic-sensitive transistor was done.Anisotropic etching and reliable technique project were provided and applied in order to fabricate SMST with rectangle-plank-cubic construction.This means that a new kind of fabrication technology for silicon magnetic-sensitive transistor was provided.The result shows that the technique can be not only compatible with IC technology but also integrated easily,and has a wide application field.
基金This work was supported by National Natural Science Foundation of China, Under Grant No.（60676044）
文摘This paper reports on the fabrication and sensing characteristics of Polyimide-based humidity sensor,based on that,a new integrated circuit of humidity measurement has been designed.It is a novel capacitive-type systems on a chip structure using the MEMS process.The results show that the new sensor presents sensing characteristics over a humidity range from 10%～70% RH at 20℃,and the sensor is able to fabricated together with ICs technology.The result shows that integration of humidity sensor with integrated circuit of humidity measurement is considerably easier when they are built in sensing groove.The appeal of a new structure like this brings the possibility of applications that would require the flexibility of simple screen printing.
文摘In this paper we put forward a new concept about effective trapping center concentration N^e_T which is decreasing with the trapped charge Q corresponding to index movement,based on that,we discuss theⅠ-Ⅴand temperature characteristics of polysilicon resistors.The new concept presents ideal theoretical interpretion for the originally observed current-voltage negative-resistance characteristics of polysilicon resistors formed on the flow sensor,and also for poly-silicon film resistors. The final results agree well with the theoretical current-voltage characteristics.
基金Project supported by the National Natural Science Foundation of China (No.60676044)the Science and Technology Research Program of Heilongjiang Provincial Department of Education (No.11521215)
文摘A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when VDS = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor （MAGFET） with an L ： W ratio of 2 ： 1 is 21.26 mV/T, and that with an L ： W ratio of 4 ： 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L ： W ratio of 4 ： 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.
