A sintered Ti13Cus7 target was sputtered by reactive direct current （DC） magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-coppernitrogen thin films were deposited o...A sintered Ti13Cus7 target was sputtered by reactive direct current （DC） magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-coppernitrogen thin films were deposited on Si （111）, glass slide and potassium bromide （KBr） substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction （XRD）. The chemical bonding was characterized by Fourier transform infrared （FTIR） spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide （anti ReO3） structures of titanium doped Cu3N （Ti：Cu3N） and nanocrystallite face centered cubic （fcc） structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy （SEM/EDX） were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio （-0.07） below that of the original target （- 0.15）. The transmittance spectra of the composite films were measured in the range of 360 nm to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti：Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films＇ resistivity upon sputtering power is shown.展开更多
Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of t...Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of the fabricated ZnS：Cu thin films. It was observed that by increasing the concentration of Cu^2＋ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm.The peak positions of the luminescence showed a red shift as the Cu^2＋ C ion concentration was increased, which indicates that the acceptor level（of Cu^2＋） is getting close to the valence band of ZnS.展开更多
基金the financial support of the Iranian nanotechnology initiative
文摘A sintered Ti13Cus7 target was sputtered by reactive direct current （DC） magnetron sputtering with a gas mixture of argon/nitrogen for different sputtering powers. Titanium-coppernitrogen thin films were deposited on Si （111）, glass slide and potassium bromide （KBr） substrates. Phase analysis and structural properties of titanium-copper-nitrogen thin films were studied by X-ray diffraction （XRD）. The chemical bonding was characterized by Fourier transform infrared （FTIR） spectroscopy. The results from XRD show that the observed phases are nano-crystallite cubic anti rhenium oxide （anti ReO3） structures of titanium doped Cu3N （Ti：Cu3N） and nanocrystallite face centered cubic （fcc） structures of copper. Scanning electron microscopy and energy dispersive X-ray spectroscopy （SEM/EDX） were used to determine the film morphology and atomic titanium/copper ratio, respectively. The films possess continuous and agglomerated structure with an atomic titanium/copper ratio （-0.07） below that of the original target （- 0.15）. The transmittance spectra of the composite films were measured in the range of 360 nm to 1100 nm. Film thickness, refractive index and extinction coefficient were extracted from the measured transmittance using a reverse engineering method. In the visible range, the higher absorption coefficient of the films prepared at lower sputtering power indicates more nitrification in comparison to those prepared at higher sputtering power. This is consistent with the formation of larger Ti：Cu3N crystallites at lower sputtering power. The deposition rate vs. sputtering power shows an abrupt transition from metallic mode to poisoned mode. A complicated behavior of the films＇ resistivity upon sputtering power is shown.
文摘Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of the fabricated ZnS：Cu thin films. It was observed that by increasing the concentration of Cu^2＋ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm.The peak positions of the luminescence showed a red shift as the Cu^2＋ C ion concentration was increased, which indicates that the acceptor level（of Cu^2＋） is getting close to the valence band of ZnS.
