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Investigation on resist development rate model for synchrotron radiation X-ray lithography
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作者 谢常青 陈梦真 +3 位作者 王玉玲 孙宝银 周生辉 朱樟震 《Chinese Science Bulletin》 SCIE EI CAS 1995年第10期861-864,共4页
Since the synchrotron radiation X-ray lithography (SRXRL) was put forward, it hascaught many people’s attention day after day. It has much benefit, such as high-structuralresolution, large process window, high throug... Since the synchrotron radiation X-ray lithography (SRXRL) was put forward, it hascaught many people’s attention day after day. It has much benefit, such as high-structuralresolution, large process window, high throughput. It is generally thought a very goodlithography technique when dimensions shrink to 0.25μm and below. Because of the im- 展开更多
关键词 SYNCHROTRON RADIATION X-RAY LITHOGRAPHY RESIST DEVELOPMENT rate model Marquardt method.
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