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1
|
Low frequency effects of surface states on 4H—SiC metal—semiconductor field effect transistor |
YangLin-An YuChun-Li ZhangYi-Men ZhangYu-Ming
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2003 |
0 |
|
|
2
|
6H-SiC Schottky barrier source／drain NMOSFET with field-induced source／drain extension |
汤晓燕
张义门
张玉明
郜锦侠
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2005 |
0 |
|
|
3
|
Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source／drain NMOSFETs |
汤晓燕
张义门
张玉明
郜锦侠
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2004 |
0 |
|
|
4
|
Analytical model of electron transport characteristics for 4H-SiC material and devices |
吕红亮
张义门
张玉明
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2004 |
0 |
|
|
5
|
Trapping effect modeling for SiC power MESFETs |
YangLin-An ZhangYi-Men YuChun-Li ZhangYu-Ming
|
《Chinese Physics B》
SCIE
EI
CAS
CSCD
|
2003 |
0 |
|
