This paper presents the modeling of electrical I-V verification of photovoltaic modules using five-parameter models based on the minimum usage of input data, which are usually provided by manufacturer’s datasheet. Ho...This paper presents the modeling of electrical I-V verification of photovoltaic modules using five-parameter models based on the minimum usage of input data, which are usually provided by manufacturer’s datasheet. However, we vary them with a step of 10-4, the ideality factor between 0.0 and 4 for each iteration in order to choose the value, which gives a minimal relative error of the maximum power point. Moreover, when is known, the other four parameters (i.e., Rs, I0, Iph and Rsh) are known. Finally, the effectiveness of this approach is then validated through comparison of the experimental results data under outdoor weather conditions.展开更多
Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sen...Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and for p-type silicon as functions of impurity concentration for different temperatures. This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.展开更多
文摘This paper presents the modeling of electrical I-V verification of photovoltaic modules using five-parameter models based on the minimum usage of input data, which are usually provided by manufacturer’s datasheet. However, we vary them with a step of 10-4, the ideality factor between 0.0 and 4 for each iteration in order to choose the value, which gives a minimal relative error of the maximum power point. Moreover, when is known, the other four parameters (i.e., Rs, I0, Iph and Rsh) are known. Finally, the effectiveness of this approach is then validated through comparison of the experimental results data under outdoor weather conditions.
文摘Piezoresistive pressure sensors based on silicon have a large thermal drift because of their high sensitivity to temperature. The study of the effect of the temperature and doping level on characteristics of these sensors is essential to define the parameters that cause the output characteristics drift. In this study, we adopted the model of Kanda to determine the effect of the temperature and of doping level on the piezoresistivity of the Silicon monocrystal. This is to represent P(N,T) and for p-type silicon as functions of impurity concentration for different temperatures. This allows us to see the effect of temperature and doping concentration on the output characteristics of the sensor. Finally, we study the geometric influence parameters and doping on these characteristics to optimize the sensor performance. This study allows us to predict the sensor behavior against temperature and to minimize this effect by optimizing the doping concentration.
