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A Cu/ZnO Nanowire/Cu Resistive Switching Device 被引量:1
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作者 Lijie Li Yan Zhang Zhengjun Chew 《Nano-Micro Letters》 SCIE EI CAS 2013年第3期159-162,共4页
A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires... A new device has been realized using flip-chip joining two printed circuit boards(PCBs) on which zinc oxide(ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I-V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source. 展开更多
关键词 Cu/ZnO NANOWIRES FLIP-CHIP Resistive switching DEVICE
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Modeling the open circuit output voltage of piezoelectric nanogenerator 被引量:3
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作者 HUANG Xin LI LiJie ZHANG Yan 《Science China(Technological Sciences)》 SCIE EI CAS 2013年第11期2622-2629,共8页
Piezoelectric nanogenerators(NGs)have been developed for converting mechanical energy into electric energy using ZnO,GaN,ZnSnO3,and PZT nanowires.Due to the unique polarity and non-central symmetry of the wurtzite str... Piezoelectric nanogenerators(NGs)have been developed for converting mechanical energy into electric energy using ZnO,GaN,ZnSnO3,and PZT nanowires.Due to the unique polarity and non-central symmetry of the wurtzite structure,a composite made of using the conical shaped nanowires are used as a simple,cost-effective,and scalable nanogenerator.Based on the finite element methods,the output voltage of the nanogenerator is modeled numerically.The key factors:the spatial location of nanowires,length and dip angle of nanowires,thickness of NG devices,and the physical properties of the polymer inside NGs,which affect the output voltage are studied.The results provide guidance for optimization the output of piezoelectric nanogenerators. 展开更多
关键词 输出电压 纳米线 发电机 压电 造型 ZnSnO3 非中心对称 有限元方法
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Controlling the luminescence of monolayer MoS2 based on the piezoelectric effect 被引量:3
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作者 Lijie Li Yan Zhang 《Nano Research》 SCIE EI CAS CSCD 2017年第7期2527-2534,共8页
We report on manipulating the stimulated emission of monolayer molybdenum disulfide (MoS2) with the piezoelectric effect. The analysis is based on quantum mechanics. The stimulated emission of this two-dimensional m... We report on manipulating the stimulated emission of monolayer molybdenum disulfide (MoS2) with the piezoelectric effect. The analysis is based on quantum mechanics. The stimulated emission of this two-dimensional material has been simulated to establish the relation between the total emission rate and the energy of the photon excitation. We demonstrate that the piezoelectric-induced charges enhance the emission rate by changing the carrier concentration. It is found that the emission intensity is proportional to the carrier density in the low-density range, and eventually reaches a steady value in the high-density region. An externally applied mechanical force also leads to a change in the second harmonic generation of the monolayer MoS2. 展开更多
关键词 piezo-phototronics LUMINESCENCE MOS2
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Piezotronic effect on the luminescence of quantum dots for micro/nano-newton force measurement 被引量:2
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作者 Yan Zhang Jiaheng Nie Lijie Li 《Nano Research》 SCIE EI CAS CSCD 2018年第4期1977-1986,共10页
The luminescence of semiconductor quantum dots (QDs) can be adjusted using the piezotronic effect. An external mechanical force applied on the QD generates a piezoelectric potential, which alters the luminescence of... The luminescence of semiconductor quantum dots (QDs) can be adjusted using the piezotronic effect. An external mechanical force applied on the QD generates a piezoelectric potential, which alters the luminescence of the QD. A small mechanical force may induce a significant change on the emission spectrum. In the case of InN QDs, it is demonstrated that the unforced emission wavelength is more than doubled by a force of 1 μN. The strategy of using the piezotronic effect to tune the color of the emission leads to promising noncontact force- measurement applications in biological and medical sensors and force-sensitive displays. Several piezoelectric semiconductor materials have been investigated in terms of the tunability of the emission wavelength in the presence of an external applied force. It is found that CdS and CdSe demonstrate much higher tunability δλ/δF, which makes them suitable for micro/nano-newton force measurement applications. 展开更多
关键词 piezotronic effect quantum dot (QD) LUMINESCENCE force measurement
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压电电子学金属-绝缘体-半导体晶体管的电容-电压特性 被引量:3
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作者 郑嘉扬 周永利 +2 位作者 张亚明 李立杰 张岩 《Science Bulletin》 SCIE EI CAS CSCD 2020年第2期161-168,88,共9页
压电半导体具有压电效应和半导体电学特性,可以用于压电电子学器件和压电光电子学器件.压电电子学器件和压电光电子学器件利用外加应变产生的压电电荷调控压电电子学pn结、金属半导体(M-S)接触的载流子传输、分离、复合等过程.压电电子... 压电半导体具有压电效应和半导体电学特性,可以用于压电电子学器件和压电光电子学器件.压电电子学器件和压电光电子学器件利用外加应变产生的压电电荷调控压电电子学pn结、金属半导体(M-S)接触的载流子传输、分离、复合等过程.压电电子学器件具有灵敏度高、响应速度快和功耗超低的优点,非常适合在自驱动系统中应用,因此在物联网、可穿戴系统、植入式传感系统具有巨大的应用价值.压电电荷的分布宽度能够显著影响压电电子学器件的传感性能,是压电电子学器件重要参数之一.压电电荷的分布宽度则可以通过压电电子学器件的电容电压(C-V)特性获得.本文以压电电子学金属-绝缘体-半导体(MIS)晶体管为例,提出对压电电荷分布影响进行测量和计算的理论模型,并进行了数值模拟,为以C-V测量为基础的结区压电电荷分布宽度实验设计给出了可行的理论方案. 展开更多
关键词 Piezotronic effect Capacitance-voltage(C-V)characteristics METAL-INSULATOR-SEMICONDUCTOR Distribution WIDTH of strain-induced piezoelectric CHARGES
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