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Highly ordered lead-free double perovskite halides by design 被引量:4
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作者 Chang Won Ahn Jae Hun Jo +11 位作者 Jong Chan Kim Hamid Ullah Sangkyun Ryu Younghun Hwang Jin San Choi Jongmin Lee Sanghan Lee Hyoungjeen Jeen Young-Han Shin Hu Young Jeong Ill Won Kim Tae Heon Kim 《Journal of Materiomics》 SCIE EI 2020年第4期651-660,共10页
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to leadbased perovskite halides.Recently,single-crystalline double perovskite halides were synthesized,and their intrigui... Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to leadbased perovskite halides.Recently,single-crystalline double perovskite halides were synthesized,and their intriguing functional properties were demonstrated.Despite such pioneering works,lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices.Here,we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale.We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis.The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further.Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity. 展开更多
关键词 Cs2AgBiBr6 LEAD-FREE Double perovskite Single crystal
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Effect of Zn doping on electronic structure and optical properties zincblende GaN(A DFT+U insight) 被引量:1
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作者 Muhammad Junaid Iqbal Khan Zarfishan Kanwal +5 位作者 Masood Yousaf Hamid Ullah Javed Ahmad Abid Latif Yong-Han Shin Ata Ur Rahman Khalid 《Communications in Theoretical Physics》 SCIE CAS CSCD 2021年第3期139-147,共9页
The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies.Keeping this fact,we investi... The development of new materials,having exceptional properties in comparison to existing materials is highly required for bringing advancement in electronic and optoelectronic technologies.Keeping this fact,we investigated structural,electronic,and optical properties of zincblende GaN doped with selected Zn concentrations(6.25%,12.50%,and 18.70%),using the first-principle calculations based on density functional theory with GGA+U.We conducted the entire study using the WIEN2K code.In this study,we calculated various significant parametric quantities such as cohesive energies,formation energies,bulk moduli,and lattice constants along with the study of optical and electronic properties by substituting Ga atoms with Zn atoms in 1×2×2 supercell.The structural stability is confirmed by studying the phonon dispersion curves which suggest that Zn:GaN material is stable against the 6.25%and 18.70%Zn concentrations while for 12.50%,it shows instability.The Hubbard values U=0,2,4,6 eV were added to GGA and the electronic properties were improved with the U=6 eV.Optical absorption was blue shifted while the refractive index and dielectric constant were increased with increasing the Zn concentrations.Electronic properties are enhanced due to the prime contribution of cations(Zn)3ri states.The optical and electronic properties are further discussed in detail in the entire study. 展开更多
关键词 density functional theory(DFT) OPTOELECTRONICS Ⅲ-Ⅴsemiconductors optical properties electronic properties structural properties
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