Efficient decision-making remains an open challenge in the research community,and many researchers are working to improve accuracy through the use of various computational techniques.In this case,the fuzzification and...Efficient decision-making remains an open challenge in the research community,and many researchers are working to improve accuracy through the use of various computational techniques.In this case,the fuzzification and defuzzification processes can be very useful.Defuzzification is an effective process to get a single number from the output of a fuzzy set.Considering defuzzification as a center point of this research paper,to analyze and understand the effect of different types of vehicles according to their performance.In this paper,the multi-criteria decision-making(MCDM)process under uncertainty and defuzzification is discussed by using the center of the area(COA)or centroidmethod.Further,to find the best solution,Hurwicz criteria are used on the defuzzified data.Anewdecision-making technique is proposed using Hurwicz criteria for triangular and trapezoidal fuzzy numbers.The proposed technique considers all types of decision makers’perspectives such as optimistic,neutral,and pessimistic which is crucial in solving decisionmaking problems.A simple case study is used to demonstrate and discuss the Centroid Method and Hurwicz Criteria for measuring risk attitudes among decision-makers.The significance of the proposed defuzzification method is demonstrated by comparing it to previous defuzzification procedures with its application.展开更多
The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuI...The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.展开更多
基金The Research Center for Advanced Materials Science(RCAMS)at King Khalid University,Saudi Arabia,for funding this work under the Grant Number RCAMS/KKU/019-20.
文摘Efficient decision-making remains an open challenge in the research community,and many researchers are working to improve accuracy through the use of various computational techniques.In this case,the fuzzification and defuzzification processes can be very useful.Defuzzification is an effective process to get a single number from the output of a fuzzy set.Considering defuzzification as a center point of this research paper,to analyze and understand the effect of different types of vehicles according to their performance.In this paper,the multi-criteria decision-making(MCDM)process under uncertainty and defuzzification is discussed by using the center of the area(COA)or centroidmethod.Further,to find the best solution,Hurwicz criteria are used on the defuzzified data.Anewdecision-making technique is proposed using Hurwicz criteria for triangular and trapezoidal fuzzy numbers.The proposed technique considers all types of decision makers’perspectives such as optimistic,neutral,and pessimistic which is crucial in solving decisionmaking problems.A simple case study is used to demonstrate and discuss the Centroid Method and Hurwicz Criteria for measuring risk attitudes among decision-makers.The significance of the proposed defuzzification method is demonstrated by comparing it to previous defuzzification procedures with its application.
文摘The CuInGeSe_4 thin film was deposited onto n-type single crystal silicon wafers by the electron beam deposition technique. The Au/CuInGeSe_4/n-Si/Al heterojunction device has been fabricated. The structure of the CuInGeSe_4 thin film was characterized by X-ray diffraction(XRD), scanning electron microscope(SEM), and energy dispersive X-ray analysis(EDX). The dark current-voltage characteristics of the Au/CuInGeSe_4/n-Si/Al heterojunction diode have been studied at a temperature range of 303-383 K. Also, the photovoltaic properties were examined at different illumination intensities. The capacitance-voltage characteristics of the CuInGeSe_4/n-Si heterojunction were studied at different temperatures in the dark.
