Comparative Performance Evaluation of Large FPGAs with CNFET-and CMOS-based Switches in Nanoscale

Routing resources are the major bottlenecks in improving the performance and power consumption of the current FPGAs. Recently reported researches have shown that carbon nanotube field effect transistors(CNFETs) have considerable potentials for improving the delay and power consumption of the modern FPGAs. In this paper, hybrid CNFET-CMOS architecture is presented for FPGAs and then this architecture is evaluated to be used in modern FPGAs. In addition, we have designed and parameterized the CNFET-based FPGA switches and calibrated them for being utilized in FPGAs at 45 nm, 22 nm and 16 nm technology nodes.Simulation results show that the CNFET-based FPGA switches improve the current FPGAs in terms of performance, power consumption and immunity to process and temperature variations. Simulation results and analyses also demonstrate that the performance of the FPGAs is improved about 30%, on average and the average and leakage power consumptions are reduced more than 6% and 98% respectively when the CNFET switches are used instead of MOSFET FPGA switches. Moreover, this technique leads to more than 20.31%smaller area. It is worth mentioning that the advantages of CNFET-based FPGAs are more considerable when the size of FPGAs grows and also when the technology node becomes smaller.

Efficient CNTFET-based Ternary Full Adder Cells for Nanoelectronics

This paper presents two new efficient ternary Full Adder cells for nanoelectronics. These CNTFETbased ternary Full Adders are designed based on the unique characteristics of the CNTFET device, such as the capability of setting the desired threshold voltages by adopting proper diameters for the nanotubes as well as the same carrier mobilities for the N-type and P-type devices. These characteristics of CNTFETs make them very suitable for designing high-performance multiple-Vth structures. The proposed structures reduce the number of the transistors considerably and have very high driving capability. The presented ternary Full Adders are simulated using Synopsys HSPICE with 32 nm CNTFET technology to evaluate their performance and to confirm their correct operation.

A novel ternary half adder and multiplier based on carbon nanotube field effect transistors

A lot of research has been done on multiple-valued logic(MVL) such as ternary logic in these years. MVL reduces the number of necessary operations and also decreases the chip area that would be used. Carbon nanotube field effect transistors(CNTFETs) are considered a viable alternative for silicon transistors(MOSFETs). Combining carbon nanotube transistors and MVL can produce a unique design that is faster and more flexible. In this paper, we design a new half adder and a new multiplier by nanotechnology using a ternary logic, which decreases the power consumption and chip surface and raises the speed. The presented design is simulated using CNTFET of Stanford University and HSPICE software, and the results are compared with those of other studies.

Design and analysis of carbon nanotube FET based quaternary full adders

CMOS binary logic is limited by short channel effects, power density, and interconnection restrictions. The effective solution is non-silicon multiple-valued logic （MVL） computing. This study presents two high-performance quaternary full adder cells based on carbon nanotube field effect transistors （CNTFETs）. The proposed designs use the unique properties of CNTFETs such as achieving a desired threshold voltage by adjusting the carbon nanotube diameters and having the same mobility as p-type and n-type devices. The proposed circuits were simulated under various test conditions using the Synopsys HSPICE simulator with the 32 nm Stanford comprehensive CNTFET model. The proposed designs have on average 32% lower delay, 68% average power, 83% energy consumption, and 77% static power compared to current state-of-the-art quaternary full adders. Simulation results indicated that the proposed designs are robust against process, voltage, and temperature variations, and are noise tolerant.