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High Power InG sP/G s SCH SQW Lasers
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作者 LIZhong-hui Xiang-wu 《Semiconductor Photonics and Technology》 CAS 2000年第4期193-195,共3页
InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold curre... InG sP/G s SCH SQW lasers have been prepared by LP-MOCVD. The dependence of t hreshold current density on cavity length was explained. Laser diodes are char acterized by the output power of 1 W to 2 W, threshold current density ( J th ) of 330 A/cm 2 to 450 A/cm 2 and external differe ntial quantum efficiency ( η d) of 35% to 75%, and these characteristics ar e in good agreement with the designed requirement. 展开更多
关键词 HETEROSTRUCTURE Quantum well Semicond uctor lasers
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