In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cove...In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cover of thermal protection and controlling theamount of the super cooling,high quality epitxial layers on corrugated surface are obtained.The oxide stripe lasers with a stripe width of 20μm are fabricated.Single-mode oscillation isachieved at 1.293μm,and a high single-mode oscillation yield is also obtained.展开更多
The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A la...The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.展开更多
The improvement of indium tin oxide(ITO)anode contact to organic electroluminescent devices via oxygen plama-treatment is investigated.Enhanced hole-injection efficiency improved the performance of organic light-emitt...The improvement of indium tin oxide(ITO)anode contact to organic electroluminescent devices via oxygen plama-treatment is investigated.Enhanced hole-injection efficiency improved the performance of organic light-emitting devices.The injection current increased by 1-2 orders of magnitude and the turn-on voltages droped several volts.Much higher injection current could be applied to achieve much higher brightness.Maximum brightness and luminous efficiency can reach to about 4000 cd/m^(2) and 0.31m/W for the structure of ITO/TPD/Alq3/Al,respectively.展开更多
The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing l...The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.展开更多
We used a new polyphenylene derivative-polynitrobenzene(PNB)to construct metal/polymer Schottky devices,and studied the influence of polymer film thickness,thermal treatment and different molar-ratio of dopant on the ...We used a new polyphenylene derivative-polynitrobenzene(PNB)to construct metal/polymer Schottky devices,and studied the influence of polymer film thickness,thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions.The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good Ⅰ-Ⅴ behavior.But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole.展开更多
We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of excit...We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.展开更多
Expressions of dispersion relation and propagation power are presented for the nonlinear transverse-electric(TE)waves in a two-core optical waveguide with a nonlinear cladding.The properties of the nonlinear TE waves ...Expressions of dispersion relation and propagation power are presented for the nonlinear transverse-electric(TE)waves in a two-core optical waveguide with a nonlinear cladding.The properties of the nonlinear TE waves are analyzed.It is found that when the total core thickness and the distance between the two cores are sufficiently large,the power curves of the higher odd modes become very sharp in some narrow ranges of the effective refractive index,compared with those of the higher even modes.展开更多
基金Supported by National Natural Science Foundation of Chinathe Trans-Century Training Porgramme Foundation for Talents of the State Education Commission.
文摘In this paper,the fabrication of 1.3μm InGaAsP/InP gain-coupled DFB lasers with lossgrating is reported for the first time.A technique of regrowth on corrugated surface usingLPE is developed.By using GaAs as the cover of thermal protection and controlling theamount of the super cooling,high quality epitxial layers on corrugated surface are obtained.The oxide stripe lasers with a stripe width of 20μm are fabricated.Single-mode oscillation isachieved at 1.293μm,and a high single-mode oscillation yield is also obtained.
基金Supported by the National Natural Science Foundation of China,。
文摘The partial disordering of GaAs/AlGaAs quantum well(QW)material has been obtained by rapid thermal annealing with SO2 dielectric capping film.In this case,the absorption edge of QW material was shifted apparently.A laser and a modulator were integrated on a same chip by partial disordering process on the select4d area of QW wafer which was grown by molecular beam epitaxy.
基金Supported by the National Natural Science Foundation of China under Grant No.69637010。
文摘The improvement of indium tin oxide(ITO)anode contact to organic electroluminescent devices via oxygen plama-treatment is investigated.Enhanced hole-injection efficiency improved the performance of organic light-emitting devices.The injection current increased by 1-2 orders of magnitude and the turn-on voltages droped several volts.Much higher injection current could be applied to achieve much higher brightness.Maximum brightness and luminous efficiency can reach to about 4000 cd/m^(2) and 0.31m/W for the structure of ITO/TPD/Alq3/Al,respectively.
基金Supported by the High Technology Research and Development Programme of China under Contract 863-307-15-3(6).
文摘The relatively low Schottky barrier height on In_(0.52)Al_(0.48)As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high electron mobility transistors(E-HEMTs).By introducing lattice mismatched strained aluminum-rich In_(0.45) Al_(0.55)As as the Schottky contact material to enhance the barrier height,we have developed InP-based InAlAs/InGaAs/InP E-HEMT with threshold voltage of about 150 m V.A maximum extrinsic transconductance of 660mS/mm and output conductance of 15mS/mm are measured for 1μm-gate length devices at room temperature.The devices also show excellent radio-frequency performance with cutoff frequency of 50 GHz and maximum oscillation frequency of 54 GHz.
文摘We used a new polyphenylene derivative-polynitrobenzene(PNB)to construct metal/polymer Schottky devices,and studied the influence of polymer film thickness,thermal treatment and different molar-ratio of dopant on the electrical properties of the junctions.The Al/PNB junction with 100nm in thickness of pure PNB film exhibited a relatively good Ⅰ-Ⅴ behavior.But the open voltage and rectification chatacteristics improved greatly when the PNB film was heated or lightly doped with poly-N-vinylcarbazole.
文摘We report a detailed analysis of optical properties of single submonolayer InAs structures grown on GaAs(001)matrix.It is shown that the formation of InAs dots with 1 monolayer(ML)height leads to localization of exciton under certain submonolayer InAs coverage,which play a key role in the highly improved luminescence efficiency of the submonolayer InAs/GaAs structures.
基金Supported by the National Integra ted Optoelec tronics Labora tory of China(No.9605).
文摘Expressions of dispersion relation and propagation power are presented for the nonlinear transverse-electric(TE)waves in a two-core optical waveguide with a nonlinear cladding.The properties of the nonlinear TE waves are analyzed.It is found that when the total core thickness and the distance between the two cores are sufficiently large,the power curves of the higher odd modes become very sharp in some narrow ranges of the effective refractive index,compared with those of the higher even modes.
